Gallium nitride-based transistor with high electron mobility

Abstract

The invention relates to a gallium nitride-based transistor with high electron mobility. The gallium nitride-based transistor comprises a substrate, a GaN (gallium nitride) buffer layer, a channel layer, a barrier layer, and a source electrode, a drain electrode and a grid electrode on the barrier layer, a charge compensation layer between the grid electrode and the drain electrode, and a metal electrode and an insulating medium on the charge compensation layer from the bottom up in sequence; the gallium nitride-based transistor is characterized in that the channel layer, the barrier layer and the charge compensation layer are all made from the GaN material; the channel layer and the barrier layer are opposite in the direction of polarization; and the barrier layer and the charge compensation layer are opposite in the direction of polarization. Due to the polarized charge imbalance between the channel layer and the barrier layer, and between the barrier layer and the charge compensation layer, charges of the same quantity and opposite types are generated, and a charge automatically-balanced super-junction structure is formed; the problems of low reliability and low output power and the like caused by the reason that AlGaN and other materials are adopted for the barrier layer are solved; and meanwhile, the problem of charge imbalance of the existing super-junction GaN electric appliance is solved as well, so that that the performance of the device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a gallium nitride-based high electron mobility transistor. Background technique [0002] Gallium nitride (GaN)-based high electron mobility transistor (HEMT) not only has excellent characteristics such as large band gap, high critical breakdown electric field, high electron saturation velocity, good thermal conductivity, radiation resistance and good chemical stability, GaN The material can also form a two-dimensional electron gas (2DEG) heterojunction channel with high concentration and high mobility with materials such as aluminum indium gallium nitride (AlxInyGa1-x-yN). Therefore, GaN HEMT is especially suitable for high-voltage, high-power and high-temperature applications, and is one of the most potential transistors for power electronics applications. [0003] Existing GaN HEMTs such as figure 1 As shown, the device usually uses materials such as AlGaN as the barrier ...

AI Technical Summary

Problems solved by technology

[0011] The technical problem to be solved by the present invention is to provide a method for the above-mentioned prior art that can not only avoid the problems of output power drop and reliability caused by the use of barrier layers such as AlGaN, but also solve the problem of charge imbalance in existing super-junction GaN HEMTs. Gallium Nitride-Based High Electron Mobility Transistors

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