Transconductance Operational Amplifier Circuit and Cellular Neural Network
A transconductance operational amplifier and circuit technology, applied in the field of transconductance operational amplifier circuits and cellular neural networks, can solve the problems of high power consumption, complex structure, and large overall circuit integration area, so as to reduce power consumption, improve computing power, The effect of saving computing time
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0045] Please refer to figure 1 , the present application provides a transconductance operational amplifier circuit, which includes a ground terminal, a power supply voltage terminal, a current bias module 11 , a processing module 13 and a mirror module 15 . Wherein, the power supply voltage terminal is used to input the power supply voltage VDD. The current bias module 11 , the processing module 13 and the mirror module 15 are composed of tunneling field effect transistors.
[0046]The current bias module 11 is connected to the power supply voltage terminal and the ground terminal, and is connected to the processing module 13 at a first internal node for providing a bias current to the processing module 13 . In a preferred embodiment, the current bias module 11 includes a tunneling field effect transistor M1 , a tunneling field effect transistor M2 , a tunneling field effect transistor M12 and a tunneling field effect transistor M10 . Wherein, the gate of the tunneling fiel...
Embodiment 2
[0057] Please refer to image 3 , in another embodiment, the transconductance operational amplifier circuit of the present application is used to find the pixel with the minimum intensity. Wherein, the tunneling field effect transistor M11 is N-type, its drain is connected to the source of the tunneling field effect transistor M6 and the drain of the tunneling field effect transistor M8, and its source is connected to the source of the tunneling field effect transistor M5 and the drain of the tunneling field effect transistor M8. The drain of the tunneling field effect transistor M7.
[0058] Specifically, the magnitude of the voltage Vi2 represents the intensity of the pixel. By adjusting the fixed voltage Vi1, make and Vi1>Vi2. At this time, the N-type TFET tube M11 is turned on, and the transconductance operational amplifier circuit works normally. The higher the pixel intensity is, the higher the voltage of Vi2 is, and the voltage pull-down module 132 pulls down the sou...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com