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Hydrofluoroolefin etching gas mixtures

A technology of gas mixture and etching gas, which is applied in the direction of surface etching composition, detergent composition, non-surface active detergent composition, etc., and can solve the problems of high energy consumption and the like

Inactive Publication Date: 2016-08-31
THE CHEMOURS CO FC LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Also, even with process optimization, cleaning gases have the potential to be released
Finally, given the chemical stability of these gases, their activation can be energy-intensive
[0003] It is further understood that these gases can produce relatively high levels of toxic off-gases which may create additional GWP or environmental, health and safety (EHS) concerns beyond the GWP of the cleaning or etching gases themselves

Method used

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  • Hydrofluoroolefin etching gas mixtures
  • Hydrofluoroolefin etching gas mixtures

Examples

Experimental program
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example

[0023] The remote plasma source is a commercially available hyperloop type MKS ex reactive gas generator unit, manufactured by MKS Instruments, Andover, MA, USA. Feedstock gases (such as oxygen, hydrofluoroolefins, and carrier gases) are fed to a remote plasma source and passed through an annular discharge chamber where they are discharged with 400 kHz radio frequency power to form an activated gas mixture. Oxygen is manufactured by Airgas with a purity of 99.999%. Hydrofluoroolefins are selected from Table 1. Argon was manufactured by Airgas, grade 5.0. Typically, argon is used to ignite the plasma, after which a timed flow of feed gas is initiated after the flow of argon is stopped. The activated gas mixture is then passed through an aluminum water cooled heat exchanger to reduce the thermal load on the aluminum processing chamber. The surface deposit-coated wafer is positioned on a temperature-controlled device in a processing chamber. Measurement of neutral temperatur...

example 1

[0025] This example shows the effect of adding the hydrofluoroolefin HFO-1234yf with oxygen on the etch rate of silicon nitride. In this experiment, the feed gas consisted of oxygen and HFO-1234yf in molar ratios of O2 to HFO of 0.4:1, 0.6:1, 1:1 and 1.2:1. The chamber pressure was 5 Torr. The total gas flow rate is 1500-2000 sccm, and the flow rate is set proportionally for each gas according to the needs of each experiment. The feed gas is activated to an effective neutral temperature using 400kHz 5.9-8.7kW RF power. The activation gas then enters the processing chamber and etches the silicon nitride surface deposits on the device, the temperature is controlled at 50°C. The etching rate exceeds 1900A / min. The same phenomenon was observed at all wafer testing temperatures: 50°C, 100°C and 150°C.

example 2

[0027] This example shows the effect of adding the hydrofluoroolefin HFO-1336mxx with oxygen on the etch rate of silicon nitride. In this experiment, the feed gas consisted of oxygen and HFO-1336mxx with molar ratios of 02 to HFO of 0.4:1, 0.6:1, 1:1, and 1.2:1. The chamber pressure was 5 Torr. The total gas flow rate is 1500-2000 sccm, and the flow rate is set proportionally for each gas according to the needs of each experiment. The feed gas is activated to an effective neutral temperature using 400kHz 5.9-8.7kW RF power. The activation gas then enters the processing chamber and etches the silicon nitride surface deposits on the device, the temperature is controlled at 50°C. The etching rate exceeds 2050A / min. The same phenomenon was observed at all wafer testing temperatures: 50°C, 100°C and 150°C.

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Abstract

The present invention relates to hydrofluorolefin compositions useful for removing surface deposits in CVD chambers, and relates to methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture created by activating a gas mixture in the chamber or in a remote chamber, where the gas mixture comprises a hydrofluorolefin.

Description

technical field [0001] The present invention relates to hydrofluoroolefin compositions used as etching gases and cleaning gases for removing deposits from the surfaces of CVD chambers and PECVD chambers. The present invention also relates to a method of removing surface deposits from the interior of a chemical vapor deposition chamber using an activated gas mixture produced by activating the gas mixture indoors or remotely, wherein the gas mixture comprises hydrofluoroolefins and preferably oxygen. Background technique [0002] Etching gases used in the semiconductor industry are used to etch deposits on surfaces. Chemical Vapor Deposition (CVD) chambers and Plasma Enhanced Chemical Vapor Deposition (PECVD) chambers require regular cleaning to remove deposits from chamber walls and platens. This cleaning process reduces the throughput of the chamber since the chamber is out of active service during the cleaning cycle. The cleaning process may include, for example, evacuati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44
CPCC23C16/4405H01J37/32357H01J37/32853H01J37/32862C09K13/00C11D7/30H01J2237/334
Inventor G.李M.J.纳帕T-C.李H-C.李
Owner THE CHEMOURS CO FC LLC