A Super-resolution Surface Microscopic Imaging Method with Broadband Light Source with Adjustable Illumination Depth
A technology for microscopic imaging and illumination depth, which is applied in microscopes, optics, optical components, etc., can solve the problems of continuous adjustment of illumination depth, inability to use light sources for illumination, and inability to obtain uniformity, etc., and achieves simple structure, low cost, and space improvement The effect of resolution
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Embodiment 1
[0036] Embodiment 1 continuously adjusts the illumination depth by changing the incident light angle. figure 1 It is a structural schematic diagram of the lighting device for super-resolution surface microscopic imaging, and the device is as follows from bottom to top: light source, transparent quartz substrate; silicon grating; Ag / SiO 2 multilayer film. Set the period of the silicon grating to 202nm, the depth to 50nm, and the duty cycle to 0.5. Ag / SiO 2 The multilayer film consists of 9 layers of Ag film (20nm) and 8 layers of SiO 2 Film (80 nm) composition. When 532nm light is incident, the dielectric constant of Ag is ε Ag =-11.3+0.17i, SiO 2 The dielectric constant The TM polarized monochromatic plane wave of illumination light λ=532nm is incident on the grating from the back of the substrate, and the diffracted wave generated by the grating can be coupled to the BPPs mode in the multilayer film structure. When Ag / SiO 2 When the multilayer film only excites the -...
Embodiment 2
[0038] Embodiment 2, the working performance of the present invention in the broadband wavelength range, the BPPs lighting structure can also achieve extremely low lighting depth in the visible light wavelength range. Figure 4 The optical transfer function of the metal / dielectric multilayer film in the visible range (400-700nm) is shown. It can be seen that the lower limit of the OTF window hardly changes with the incident wavelength, and its upper limit will slowly decrease with the increase of the incident wavelength. Among them, the upper and lower limits of the multilayer film structure OTF are defined as the kx value when the window suppression ratio is about 20 (under the condition that the transmittance is greater than 0.015) or the transmittance is about 0.015 (under the condition that the OTF window suppression ratio is greater than 20) . At the same time, it is found that when the wavelength is close to 400nm, the BPPs mode carrying the low-frequency spatial wave v...
Embodiment 3
[0041] Embodiment 3, based on this invention, the lateral imaging resolution can be improved. Imaging device structure and figure 1 Similarly, the base layer is a glass substrate, the grating layer is a sub-wavelength Cr excitation grating (period is 160nm, duty ratio is 0.5), the metal / dielectric multilayer film layer is composed of 30 to 20nm thick Ag film (when the incident wavelength is 442nm SiO with a dielectric constant of -5.77+0.225i) and a thickness of 30nm 2 Membranes (with a dielectric constant of 2.13) are stacked alternately. When a plane wave with a wavelength of 442nm is incident, Ag / SiO 2 OTF of multilayer films see Figure 6 . It can be seen from the figure that only when the p-polarized incident light is applied, the multilayer film structure exhibits bandpass filtering characteristics, and only the transverse wave vector is located at 2.2k 0 ~3.8k 0 The evanescent wave component can be enhanced and transmitted by the multilayer film structure. The tr...
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