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Mn containing P-type Cu5Ga9Te16 medium-temperature thermoelectric material and preparation technology thereof

A preparation process and technology for thermoelectric materials, applied in the field of P-type Cu5Ga9Te16 medium-temperature thermoelectric materials and its preparation process, can solve problems such as poor thermoelectric performance, and achieve low cost, reliable operation, and long life.

Inactive Publication Date: 2016-09-21
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For overcoming above-mentioned deficiency, the present invention aims to provide a kind of performance higher P-type Cu containing Mn to the art. 5 Ga 9 Te 16 The medium temperature thermoelectric material and its preparation process make it solve the technical problem of poor thermoelectric performance of existing similar materials

Method used

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  • Mn containing P-type Cu5Ga9Te16 medium-temperature thermoelectric material and preparation technology thereof
  • Mn containing P-type Cu5Ga9Te16 medium-temperature thermoelectric material and preparation technology thereof

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Experimental program
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Effect test

Embodiment 1

[0013] According to the chemical formula Cu 5 Ga 9 Te 16 Cu, Ga, and Te three-element particles with a purity greater than 99.999wt.% were weighed and mixed in a high-vacuum glove box, then placed directly in a quartz tube and sealed with paraffin wax, and quickly vacuum-packed after taking it out. Then it was smelted and synthesized at 1000°C for 45 hours, and rapidly cooled and quenched in water after smelting and synthesized. The quenched ingot was pulverized and ball milled, and the ball milling time was controlled at 5 hours. The powder after ball milling was sintered by discharge plasma spark in a short period of time, and the sintering time was 8 minutes. 5 Ga 9 Te 16 thermoelectric materials.

Embodiment 2

[0015] According to the chemical formula Cu 4.9 Ga 9 mn 0.1 Te 16 Cu, Ga, Mn and Te four-element particles with a purity greater than 99.999wt.% were weighed and mixed in a high-vacuum glove box, then placed directly in a quartz tube and sealed with paraffin wax, and quickly vacuum-packed after taking it out. Then it was smelted and synthesized at 1000°C for 45 hours, and rapidly cooled and quenched in water after smelting and synthesized. The quenched ingot was pulverized and ball milled, and the ball milling time was controlled at 5 hours. The powder after ball milling was sintered by discharge plasma spark in a short period of time, and the sintering time was 8 minutes. 5 Ga 9 mn 0.1 Te 16 thermoelectric materials.

Embodiment 3

[0017] According to the chemical formula Cu 4.8 Ga 9 mn 0.2 Te 16 Cu, Ga, Mn and Te four-element particles with a purity greater than 99.999wt.% were weighed and mixed in a high-vacuum glove box, then placed directly in a quartz tube and sealed with paraffin wax, and quickly vacuum-packed after taking it out. Then it was smelted and synthesized at 1000°C for 45 hours, and rapidly cooled and quenched in water after smelting and synthesized. The quenched ingot was pulverized and ball milled, and the ball milling time was controlled at 5 hours. The powder after ball milling was sintered by discharge plasma spark in a short period of time, and the sintering time was 8 minutes. 4.8 Ga 9 mn 0.2 Te 16 thermoelectric materials.

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Abstract

The invention relates to a Mn containing P-type Cu5Ga9Te16 medium-temperature thermoelectric material and a preparation technology thereof. The design key points lie in that Mn with the mole fraction of 0.067 is adopted in a Cu5Ga9Te16 alloy to replace the equal amount of an element Cu so as to form a Mn containing Cu5Ga9Te16 thermoelectric material, and the chemical formula of the thermoelectric material is Cu4.8Ga9Mn0.2Te16. The preparation technology comprises that corresponding amounts of such four elements as Cu, Ga, Mn and Te are weighed according to the chemical formula and are smelted for 45 hours in a vacuum mode at the temperature of 950-1050 DEG C, quenching is carried out quickly in water after the four elements are smelted, a cast ingot is taken out, crushed and machined in a ball-milling mode, powder machined in the ball-milling mode is sintered and formed through discharging plasma sparks within a short time, the sintering time is 8 minutes, the sintering temperature is 700 DEG C, the sintering pressure is 60MPa, and the thermoelectric material Cu4.8Ga9Mn0.2Te16 is prepared. When the thermoelectric material is at 858K, the Seebeck coefficient a is equal to 163.10(MuV / K), the electrical conductivity s is equal to 3.40'10<4>W<1>.m<1>, the heat conductivity k is equal to 0.59(W.K<1>.M<1>), and the maximum thermoelectricity merit figure ZT is equal to 1.10. The material provided by the invention has the advantages of being free from pollution and noise, capable of being applied to manufacturing medium-temperature generating components, reliable in operation, long ins service life and simple in preparation technology.

Description

technical field [0001] The invention relates to the field of new materials, and is suitable for the key component material of medium-temperature power generation that directly converts heat energy and electric energy, and is a P-type Cu containing Mn 5 Ga 9 Te 16 Medium-temperature thermoelectric materials and their preparation processes. Background technique [0002] Thermoelectric semiconductor material is a new type of semiconductor functional material that realizes direct mutual conversion of electric energy and thermal energy through the movement of carriers, including electrons or holes. Power generation and refrigeration devices made of thermoelectric materials have the advantages of small size, no pollution, no noise, no wear, good reliability, and long life. In the civilian field, the potential application range: household refrigerators, freezers, superconducting electronic device cooling and waste heat power generation, waste heat utilization power supply, and s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L37/02C22C1/05H10N10/852H10N15/10
CPCC22C1/05H10N10/852H10N15/15
Inventor 崔教林
Owner NINGBO UNIVERSITY OF TECHNOLOGY