Low temperature preparation method for space silicon carbide reflector module modified layer

A technology of space silicon carbide and mirrors, applied in optical components, optics, instruments, etc., to achieve the effects of reducing energy consumption, high sputtering rate, and shortening the processing cycle

Inactive Publication Date: 2016-09-28
NANJING SIMITE OPTICAL INSTR
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Problems solved by technology

[0003] The surface modification methods of silicon carbide substrate mainly include chemical vapor deposition and physical vapor deposition. Both of the above two methods need to heat the silicon carbi

Method used

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Embodiment Construction

[0015] The present invention will be described in further detail below, so that those skilled in the art can implement it with reference to the description.

[0016] A low-temperature preparation method for a modified layer of a space silicon carbide mirror assembly includes the following steps:

[0017] 1) Clean the SiC substrate: Use a mixture of ether and alcohol with a volume ratio of 1:1 to ultrasonically clean for 10-15 minutes and then dry it with a hair dryer;

[0018] 2) Prepare the modified layer by sputtering: put the cleaned SiC substrate on the substrate frame of the coating chamber of the PVD coating equipment, vacuumize the coating chamber and turn on the baking device. The baking temperature is 80°C-100°C ℃, when the vacuum degree reaches 5×10-4P, turn on the gas filling system to fill in the reaction gas methane, the flow rate of the reaction gas methane filling is 100-200sccm, and then perform reverse sputtering cleaning on the substrate, the power of the rev...

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Abstract

The invention discloses a low temperature preparation method for a space silicon carbide reflector module modified layer. The low temperature preparation method for the space silicon carbide reflector module modified layer comprises the following steps of (1) SiC substrate cleaning: cleaning an SiC substrate by using ultra-phonic for 10-15 minutes and then drying the SiC substrate; (2) modified layer sputtering preparation: putting the cleaned SiC substrate onto a substrate frame of a film coating chamber of PVD film mulching equipment, and then vacuumizing the film coating chamber, and opening a baking device and baking at the temperature of 80-100 DEG C; (3) when the vacuum degree reaches 5x10-4P, opening an air inflating system to inflate methane as the reactant gas, and then cleaning the substrate in a re-sputter manner, and sputtering the substrate for 5-6 hours under the conditions that the bias voltage of the substrate is -50v[-]-200v and the sputtering power is 2000-3000W after the re-sputter cleaning, and finally obtaining a modified layer. According to the method, the modified layer is prepared in a magnetron sputtering manner by using methane as the reactant gas and reacting at 80-100 DEG C, so that the sputtering rate is high, the machining cycle of the modified layer of an SiC base is shortened and the energy source consumption is reduced.

Description

technical field [0001] The present invention relates to the technical field of processing and coating of optical elements, in particular to a low-temperature preparation method for a modified layer of a space silicon carbide mirror assembly. Background technique [0002] Silicon carbide materials have the advantages of high rigidity, good thermal stability, small thermal expansion coefficient, high thermal conductivity, high wear resistance and chemical corrosion resistance, mechanical properties isotropic and non-toxic, etc., and are currently recognized as being used in space optics. The best mirror material for the system, very suitable for the design and manufacture of space optical instruments. Grinding SiC mirrors is very challenging due to the special structure of the SiC material: the hardness close to that of diamond brings about low grinding efficiency; the stable chemical properties cannot "soften" the surface to improve the polishing process Surface roughness an...

Claims

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Application Information

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IPC IPC(8): C23C14/35G02B1/10
CPCC23C14/35C23C14/0036G02B1/10
Inventor 王晋峰祝孟德闫海滨
Owner NANJING SIMITE OPTICAL INSTR
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