A fabrication method of deep submicron T-gate using conventional photolithography technology

Abstract

The invention discloses a preparation method for achieving deep submicron T-shaped gates by a conventional lithography technology. According to the method, patterns are mainly formed by a traditional stepper lithography machine through gumming, exposing and developing steps; the deep submicron side wall patterns are reserved and transferred by a PECVD thin-film deposition technology and an ICP etching technology to form gate pins; and then gate covers are formed by a traditional lithography technique to prepare the deep submicron T-shaped gates. Through the method disclosed by the invention, the shortcomings and defects that the deep submicron patterns cannot be processed since electron-beam lithography is low in productivity and the line width of a traditional preparation technology of the stepper lithography machine is limited can be effectively overcome; and the gate lengths and the productivity are simultaneously considered.

Description

technical field [0001] The invention relates to the technical field of compound semiconductor microelectronics, in particular to a preparation method for realizing a deep submicron T-shaped gate by using conventional photolithography technology. Background technique [0002] In recent years, due to the rapid development of smart phones, mobile base stations, Internet of Things and other services, there has been a great demand for electronic components such as power amplifiers with higher frequency and lower noise, and high-temperature and high-power single-chip microwave integrated circuits. The core device of these electronic components is the Field Effect Transistor (Field Effect Transistor). Compound semiconductors such as GaAs, GaN, and SiC have become the first choice for the preparation of such devices due to their large band gap, high electron mobility, and easy formation of two-dimensional electron gas. The device cutoff frequency is the most important index to char...

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Problems solved by technology

[0003] The purpose of the present invention is to overcome the shortcomings and shortcomings of the low production capacity of electron beam lithography and the limited line width of the traditional preparation process of stepper lithography, which cannot process deep submicron patterns. The preparation method of T-shaped gate, which can take into account both the gate length and production capacity

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