Handling method for epitaxy defect

Abstract

The invention discloses a method for treating epitaxial defects, which comprises the following steps: preparing at least one corrosion stop layer on the surface of the epitaxial wafer; destroying the corrosion stop layer of the convex part of the epitaxial defect by physical means to expose the corrosion stop layer the lower epitaxial layer; etch the exposed epitaxial layer by wet etching; remove the etch stop layer and prepare a passivation layer on the surface of the epitaxial wafer.

Description

technical field [0001] The invention relates to a method for processing epitaxial defects, belonging to the technical field of semiconductor devices and processes. Background technique [0002] Chemical vapor deposition methods such as metal-organic chemical vapor deposition (MOCVD) are widely used in LEDs and multi-junction solar cells. The epitaxial layers of both LEDs and multi-junction solar cells consist of multiple thin layers. With the most mature Ge / In 0.01 GaAs / GaInP triple-junction cells are taken as an example. The epitaxial process is to grow In on a Ge substrate by MOCVD. 0.01 For the GaAs middle cell and the GaInP top cell, each junction cell has a multilayer epitaxial structure of window layer, emitter region, base region, and back field layer, and there is a tunnel junction layer between the sub-cells. [0003] In the process of chemical vapor deposition, it is difficult to ensure absolute cleanliness on the surface of the epitaxial wafer, and foreign obje...

AI Technical Summary

Problems solved by technology

Poor crystal quality leads to a high probability of non-radiative recombination in the epitaxially grown semiconductor material

For photovoltaic devices, it will lead to smaller parallel resistance, increased leakage, and deterioration of fill factor or open circuit voltage performance

For LED devices, the internal leakage of the device will increase, the internal quantum efficiency will decrease, and the luminous brightness will decrease.

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