Handling method for epitaxy defect

A technology of epitaxial defects and processing methods, which is applied in the field of epitaxial defect processing, can solve the problems of increased internal leakage of devices, reduced internal quantum efficiency, and deterioration of fill factor open circuit voltage performance, so as to reduce leakage and non-radiative recombination Effect

Inactive Publication Date: 2016-10-12
TIANJIN SANAN OPTOELECTRONICS
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  • Abstract
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Problems solved by technology

Poor crystal quality leads to a high probability of non-radiative recombination in the epitaxially grown semiconductor material
For photovoltaic devices, it will lead to smaller parallel resistance, increased leakage, ...

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  • Handling method for epitaxy defect
  • Handling method for epitaxy defect
  • Handling method for epitaxy defect

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Embodiment Construction

[0029] The present invention will be further described below in conjunction with the examples, but the protection scope of the present invention should not be limited thereby.

[0030] The following embodiment discloses a processing method for epitaxial defects caused by epitaxial dropout phenomenon, please refer to figure 1 , which mainly includes steps S100~S400, first forming an etch stop layer on the surface of the epitaxial layer, then combining physical and chemical methods, using physical methods to destroy the etch stop layer of the raised part of the epitaxial defect, in the chemical wet etching process The corrosion stop layer only protects the epitaxial layer other than the raised position, and realizes the selective etching and passivation of the epitaxial layer at the raised defect position.

[0031] Taking a multi-junction solar cell as an example, the method for manufacturing a semiconductor device using the above processing method will be described in detail be...

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Abstract

The invention discloses a method for treating epitaxial defects, which comprises the following steps: preparing at least one corrosion stop layer on the surface of the epitaxial wafer; destroying the corrosion stop layer of the convex part of the epitaxial defect by physical means to expose the corrosion stop layer the lower epitaxial layer; etch the exposed epitaxial layer by wet etching; remove the etch stop layer and prepare a passivation layer on the surface of the epitaxial wafer.

Description

technical field [0001] The invention relates to a method for processing epitaxial defects, belonging to the technical field of semiconductor devices and processes. Background technique [0002] Chemical vapor deposition methods such as metal-organic chemical vapor deposition (MOCVD) are widely used in LEDs and multi-junction solar cells. The epitaxial layers of both LEDs and multi-junction solar cells consist of multiple thin layers. With the most mature Ge / In 0.01 GaAs / GaInP triple-junction cells are taken as an example. The epitaxial process is to grow In on a Ge substrate by MOCVD. 0.01 For the GaAs middle cell and the GaInP top cell, each junction cell has a multilayer epitaxial structure of window layer, emitter region, base region, and back field layer, and there is a tunnel junction layer between the sub-cells. [0003] In the process of chemical vapor deposition, it is difficult to ensure absolute cleanliness on the surface of the epitaxial wafer, and foreign obje...

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Application Information

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IPC IPC(8): H01L33/00H01L21/02
CPCH01L33/0066H01L21/02052
Inventor 刘冠洲毕京锋李明阳宋明辉李森林陈文浚
Owner TIANJIN SANAN OPTOELECTRONICS
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