Novel method for preparing single-layer MoS2

A new method, single-layer technology, applied in the field of materials, can solve the problems of low repeatability and inability to guarantee the preparation of single-layer MoS2, and achieve the effects of improved repeatability, short preparation cycle and low cost

Inactive Publication Date: 2016-10-26
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Single-layer MoS 2 It is a semiconductor material with a direct band gap, but the current preparation

Method used

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  • Novel method for preparing single-layer MoS2
  • Novel method for preparing single-layer MoS2
  • Novel method for preparing single-layer MoS2

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0051] Example 1.

[0052] Step (1). The SiO 2 (300nm) / Si wafer cut into 1cm 2 The square pieces serve as the substrate.

[0053] Step (2). The substrate obtained in step (1) is ultrasonically cleaned with deionized water at room temperature for 10 minutes.

[0054] Step (3). Use AR, 99.7% absolute ethanol solution to ultrasonically clean the substrate obtained in step (2) for 10 minutes at room temperature.

[0055] Step (4). The substrate obtained in step (3) is ultrasonically cleaned with deionized water at room temperature for 10 minutes.

[0056] Step (5). The substrate obtained in step (4) is ultrasonically cleaned with 30% hydrogen peroxide at room temperature for 10 minutes.

[0057] Step (6). The substrate obtained in step (5) is ultrasonically cleaned with deionized water at room temperature for 10 minutes.

[0058] Step (7). Dry the substrate obtained in step (6), then set the speed of the homogenizer to low speed 2000 rpm and high speed 8000 rpm, control the spin coating time ...

Example Embodiment

[0065] Example 2.

[0066] Step (1). The SiO 2 (300nm) / Si wafer cut into 1cm 2 The square pieces serve as the substrate.

[0067] Step (2). The substrate obtained in step (1) is ultrasonically cleaned with deionized water at room temperature for 10 minutes.

[0068] Step (3). Use AR, 99.7% absolute ethanol solution to ultrasonically clean the substrate obtained in step (2) for 10 minutes at room temperature.

[0069] Step (4). The substrate obtained in step (3) is ultrasonically cleaned with deionized water at room temperature for 10 minutes.

[0070] Step (5). The substrate obtained in step (4) is ultrasonically cleaned with 30% hydrogen peroxide at room temperature for 10 minutes.

[0071] Step (6). The substrate obtained in step (5) is ultrasonically cleaned with deionized water at room temperature for 10 minutes.

[0072] Step (7). Dry the substrate obtained in step (6), and then soak the bottom of the sink into the graphene oxide quantum dot solution, and then take out the substrate ...

Example Embodiment

[0076] Example 4.

[0077] Step (1). The SiO 2 (300nm) / Si wafer cut into 1cm 2 The square pieces serve as the substrate.

[0078] Step (2). The substrate obtained in step (1) is ultrasonically cleaned with deionized water at room temperature for 10 minutes.

[0079] Step (3). Use AR, 99.7% absolute ethanol solution to ultrasonically clean the substrate obtained in step (2) for 10 minutes at room temperature.

[0080] Step (4). The substrate obtained in step (3) is ultrasonically cleaned with deionized water at room temperature for 10 minutes.

[0081] Step (5). The substrate obtained in step (4) is ultrasonically cleaned with 30% hydrogen peroxide at room temperature for 10 minutes.

[0082] Step (6). The substrate obtained in step (5) is ultrasonically cleaned with deionized water at room temperature for 10 minutes.

[0083] Step (7). Dry the substrate obtained in step (6), and then set the speed of the homogenizer to low speed 1000 rpm and high speed 7000 rpm, control the spin coating t...

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Abstract

The invention discloses a novel method for preparing single-layer MoS2. Specifically, the size of the single-layer MoS2 and experiment repeatability are improved with a catalytic method. According to the invention, a SiO2/Si substrate is treated with a carbon-containing catalyst solution, and a single-layer MoS2 sample is prepared with a CVD method. The optical properties and surface topography of the sample are subjected to test analysis with a metallographic microscope, a Raman spectrometer, an atomic force microscope, a scanning electron microscope and the like. According to the invention, the single-layer MoS2 is prepared with the catalytic method, and the size of the single-layer MoS2 is improved to tens of micrometers. The quality of the single-layer MoS2 is good, and the repeatability of the experiment is improved. Compared to prior arts, with the method, large-size single-layer MoS2 is prepared, and experiment repeatability is also improved. The experiment has the advantages of simple operation, high feasibility, short preparation period, low cost, and the like.

Description

technical field [0001] The invention belongs to the field of material technology, in particular to a method for preparing single-layer MoS 2 new method. Background technique [0002] MoS 2 As a graphene-like material, it has some characteristics of graphene. Monolayer MoS 2 The thickness is about 0.65nm and it is a direct bandgap semiconductor material with a bandgap of about 1.8eV. MoS 2 With electrical, optical and catalytic properties, it can be used as a complement to graphene materials, such as: optoelectronics and energy storage. Due to the monolayer MoS 2 It is a semiconductor material with an atomic layer thickness, so it is very sensitive to the external environment. By studying single-layer MoS 2 The physical properties of these materials are of great significance to the development of next-generation electronic devices, optical devices, and biosensors. [0003] Single-layer MoS 2 It is a semiconductor material with a direct band gap, but the current prep...

Claims

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Application Information

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IPC IPC(8): C01G39/06
CPCC01G39/06C01P2002/82C01P2004/03C01P2004/61
Inventor 苏伟涛
Owner HANGZHOU DIANZI UNIV
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