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Application of b-doped sic nanowires in field emission cathode materials

A field emission cathode and emission cathode technology, applied in the field of nanomaterials, can solve the problem of insufficient SiC flexible cathode system, and achieve the effects of good cost controllability, high electron emission stability, and convenient processing

Active Publication Date: 2019-03-08
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the current research and development on SiC flexible cathodes is still not systematic enough, especially the research on SiC flexible cathodes with low turn-on electric field and high electron emission stability under different bending states and different temperatures is still very insufficient, which has excellent construction performance. There are great obstacles in flexible field emission devices, which need to be solved urgently

Method used

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  • Application of b-doped sic nanowires in field emission cathode materials
  • Application of b-doped sic nanowires in field emission cathode materials
  • Application of b-doped sic nanowires in field emission cathode materials

Examples

Experimental program
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Effect test

Embodiment 1

[0046] The initial raw material is selected from polysilazane, in N 2 Thermal cross-linking and curing was carried out under the protection of atmosphere at 260 °C for 30 min. The solid SiCN obtained by curing was put into a nylon resin ball mill, and milled into powder. Weigh 300mg polysilazane powder and 60mg B 2 O 3 Powder, mix the powder evenly and place it at the bottom of the graphite crucible. Cut carbon cloth 5×5cm (length×width), in 0.05mol / L Co(NO 3 ) 3 Immersion in ethanol solution and ultrasonic treatment for 10s, take out and place in air to dry naturally. The treated carbon cloth substrate was placed on the top of the graphite crucible, and then put into a graphite resistance-heated atmosphere sintering furnace together with the crucible. The atmosphere furnace is first evacuated to 10- 4 Pa, and then filled with high-purity argon (purity 99.99%) until the pressure was one atmosphere (~0.11Mpa), and the pressure was constant thereafter. Then, it was rapidly...

Embodiment 2

[0049] The B-doped SiC nanowires grown on carbon fiber cloth in Example 1 were used as flexible cathodes, and they were cut into five pieces of 0.4 × 0.6 cm 2 The five flexible cathodes were bent 0, 50, 100, 150 and 200 times respectively (the bending radius was 1.2 cm), and then the cathodes were placed in a planar structure into the field emission test system in turn, and the system was evacuated to 1.5×10 - 7 Pa, and finally the field emission performance of the flexible cathode was tested at room temperature. Image 6 Digital photographs of the flexible field emission cathodes used for testing, showing that the cathodes are highly flexible. Figure 7 is the field emission current density-electric field intensity curve of the flexible cathode after 0, 50, 100, 150 and 200 times of bending, indicating that the open electric field of the flexible cathode is 0.94, 0.93, 0.95, 0.91, 0.92 V after different bending times / μm, has a very low turn-on electric field, and remains ...

Embodiment 3

[0051] The B-doped SiC nanowires grown on carbon fiber cloth in Example 1 were used as flexible cathodes, and they were cut into five pieces of 0.4 × 0.6 cm 2 The five flexible cathodes were bent into concave I, concave II, planar, convex I and convex II structures (wherein, the bending radius of concave I and convex I was 1.2 cm, the concave II and convex II with a bending radius of 0.4cm), then the cathodes were sequentially loaded into the field emission test system, and the system was evacuated to 1.5×10 -7 Pa, and finally the field emission properties of the flexible cathodes with five structures were tested at room temperature. Figure 9 are the field emission current density-electric field intensity curves of the flexible cathode in five bending states, indicating that in different bending states, the open electric field of the flexible cathode is only 1.01, 0.98, 0.94, 0.89 and 0.86 V / μm, respectively, indicating that It has a very low turn-on electric field in differ...

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Abstract

The invention relates to nanowire material applied in field emission material, particularly relates to application of a B-doped SiC nanowire in field emission cathode material, and belongs to the technical field of nano-material. The B-doped SiC nanowire is a field emission cathode. An emission electric field is formed between the field emission cathode and a field emission anode in voltage applying. The turn-on field intensity of the field emission cathode is 0.6-1.05V / muA when emission current density is 10muA / cm2 under the condition of vacuum. The B-doped SiC nanowire field emission cathode material is convenient to process, great in cost controllability, stable in performance and high in flexibility; the material has low turn-on electric field after different bending frequency and basically remains unchanged and maintains high electron emission stability; the material has low turn-on electric field under different bending states and basically remains unchanged and maintains high electron emission stability; and the material has low turn-on electric field under different temperature and maintains high electron emission stability.

Description

technical field [0001] The invention relates to a nanowire material used in field emission materials, in particular to the application of B-doped SiC nanowires in field emission cathode materials, and belongs to the technical field of nanomaterials. Background technique [0002] Since entering the 21st century, the design and synthesis of nanostructures against the background of a new generation of flexible nanostructured devices has become a new hotspot in nanomaterials research. Field emission is one of the inherent properties of low-dimensional nanomaterials. A large number of research results show that nanostructures have excellent field emission properties that traditional materials do not have, and have huge potential application prospects in the fields of field emission displays, X-ray tubes and other optoelectronic devices. Among many field emission research systems, flexible field emission cathodes have attracted much attention in recent years due to their wide app...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J1/304H01J9/02B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01J1/304H01J9/025H01J2209/0223
Inventor 杨为佑陈善亮高凤梅郑金桔杨祚宝
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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