Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing gallium nitride light emitting diode on patterned gallium nitride single crystal substrate

A gallium nitride single crystal and light-emitting diode technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of poor thermal conductivity of sapphire substrates, and achieve the effect of good heat dissipation performance.

Active Publication Date: 2018-06-19
广东中图半导体科技股份有限公司
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the thermal conductivity of sapphire substrate is not very good

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing gallium nitride light emitting diode on patterned gallium nitride single crystal substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A method for preparing a gallium nitride light-emitting diode on a patterned gallium nitride single crystal substrate, comprising the following steps:

[0031] Step 1. Deposit SiO with a thickness of 100nm on a gallium nitride single crystal substrate by chemical vapor deposition (PECVD) 2 Or SiN is used as the mask pattern layer, and the mask pattern layer is prepared as a circular hole-shaped mask pattern layer with a periodic structure. The circular hole diameter of the circular hole-shaped mask pattern layer is 0.9 microns. The pattern period of the circular hole mask pattern layer is 1.5 microns.

[0032] Step 2, clean the gallium nitride single crystal substrate 101 prepared with a circular hole-shaped mask pattern layer and put it into an MOCVD reaction chamber for secondary growth. 2 Atmosphere and 1000°C, the pressure of the MOCVD reaction chamber is 250 torr, the V / III molar ratio is 1200, and the growth rate of 1 micron / hour is used to three-dimensionally gr...

Embodiment 2

[0041] Step 1. Deposit SiO with a thickness of 98nm on a gallium nitride single crystal substrate by chemical vapor deposition (PECVD) 2 Or SiN is used as the mask pattern layer, and the mask pattern layer is prepared as a circular hole-shaped mask pattern layer with a periodic structure. The circular hole diameter of the circular hole-shaped mask pattern layer is 0.8 microns. The pattern period of the circular hole mask pattern layer is 1.4 microns.

[0042] Step 2, clean the gallium nitride single crystal substrate 101 prepared with a circular hole-shaped mask pattern layer and put it into an MOCVD reaction chamber for secondary growth. 2 Atmosphere and 950°C, the pressure of the MOCVD reaction chamber is 200 torr, the V / III molar ratio is 1000, and the three-dimensionally grown n-type GaN three-dimensional growth layer 102 with a thickness of 150 nanometers is adopted at a growth rate of 2 microns / hour, wherein the n-type GaN The Si doping concentration of the three-dimens...

Embodiment 3

[0051] Step 1. Deposit SiO with a thickness of 102nm on a gallium nitride single crystal substrate by chemical vapor deposition (PECVD) 2 Or SiN is used as the mask pattern layer, and the mask pattern layer is prepared as a circular hole-shaped mask pattern layer with a periodic structure, and the circular hole diameter of the circular hole-shaped mask pattern layer is 1.0 microns. The pattern period of the circular hole mask pattern layer is 1.6 microns.

[0052] Step 2, clean the gallium nitride single crystal substrate 101 prepared with a circular hole-shaped mask pattern layer and put it into an MOCVD reaction chamber for secondary growth. 2 Atmosphere and 1050°C, the pressure of the MOCVD reaction chamber is 300torr, the V / III molar ratio is 1300, and the growth rate of 3 microns / hour is used to three-dimensionally grow the n-type GaN three-dimensional growth layer 102 with a thickness of 200 nanometers, wherein the n-type GaN The Si doping concentration of the three-dim...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for manufacturing a gallium nitride light emitting diode on a patterned gallium nitride monocrystalline substrate. SiO2 or SiN which is 98 nm to 102 nm in deposition thickness on the gallium nitride monocrystalline substrate is used as a mask film pattern layer, the mask film pattern layer is made into a round hole-shaped mask film pattern layer having a periodic structure, a round hole of the round hole-shaped mask film pattern layer is 0.8 micrometer to 1.0 micrometer in diameter, a pattern period of the round hole-shaped mask film pattern layer is 1.4 micrometers to 1.6 micrometers, the gallium nitride monocrystalline substrate is placed in an MOCVD reaction chamber for second growth after being cleared cleanly, a growth mode of a gallium nitride epitaxial layer can be controlled via reduction of the pressure of the MOCVD reaction chamber and improvement of a V / III ratio, the epitaxial layer can grow laterally and epitaxially on the mask film pattern layer when continuing growing vertically, and therefore a nitride-based light emitting diode of high brightness can be made. The nitride-based light emitting diode made via the method disclosed in the invention is great in heat dissipation performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, and relates to a method for preparing a high-brightness gallium nitride light-emitting diode on a patterned gallium nitride single crystal substrate. Background technique [0002] People are paying more and more attention to the heat dissipation of LEDs. This is because the light decay or life of LEDs is directly related to its junction temperature. If the heat dissipation is not good, the junction temperature will be high and the lifespan will be short. Lowering the life by 10°C will prolong the life by 2 times. According to the relationship between light decay and junction temperature, if the junction temperature can be controlled at 65°C, then the lifetime of light decay to 70% can be as high as 100,000 hours! However, limited to the heat dissipation performance of the actual LED lamp, the lifespan of the LED lamp has become a major issue affecting its performance. More...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L21/02
CPCH01L21/02389H01L21/0243H01L21/02458H01L21/0254H01L21/0262H01L33/0075
Inventor 贾传宇
Owner 广东中图半导体科技股份有限公司