Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

CMOS low gain wide tuning range fully integrated ka band millimeter wave quadrature voltage controlled oscillator

A technology of voltage-controlled oscillators and wide tuning, applied in power oscillators, electrical components, etc., can solve the problems of large substrate loss, low cut-off frequency, and existing distance in CMOS technology, and achieve the effect of excellent phase noise performance

Active Publication Date: 2019-03-01
EAST CHINA NORMAL UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Samsung and South Korea's SK Telecom have previously completed the test of the fifth-generation (5G) mobile communication system based on 28GHz millimeter wave, but there is still a distance from the official commercial use of 5G mobile communication technology.
However, the substrate loss of the CMOS process is large, which brings challenges to the design of high-quality factor passive devices; and the cut-off frequency of active devices under the CMOS process is relatively low, and the high-performance Ka-band millimeter-wave voltage-controlled oscillation is realized based on the CMOS process. device is always a big problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CMOS low gain wide tuning range fully integrated ka band millimeter wave quadrature voltage controlled oscillator
  • CMOS low gain wide tuning range fully integrated ka band millimeter wave quadrature voltage controlled oscillator
  • CMOS low gain wide tuning range fully integrated ka band millimeter wave quadrature voltage controlled oscillator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0029] refer to figure 1 , the structure of the circuit is an active device coupling LC differential NMOS cross-coupling structure, which can provide quadrature differential output signals. The first NMOS transistor M11 and the second NMOS transistor M12, the third NMOS transistor M21 and the fourth NMOS transistor M22 are cross-coupled to each other, providing negative resistance to offset the loss of the differential inductors L1, L2 and all variable capacitance transistors, thereby maintaining oscillation. The width-to-length ratios of the first NMOS transistor M11, the second NMOS transistor M12, the third NMOS transistor M21, and the fourth NMOS transistor M22 are reasonably selected, on the one hand, the parasitic capacitance of itself is reduced, and on the other hand, the oscillation Conditions; the size of the variable capacitance tube is also reasonably designed, on the one hand, considering the layout area it occupies, and on the other hand, considering the requireme...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a CMOS low-gain wide-tuning-range fully integrated Ka-band millimeter wave quadrature voltage-controlled oscillator. A MOS variable capacitor tube array directly controlled by high and low levels is added into an oscillator resonant cavity to switch access capacitance so as to achieve multi-subband tuning for obtaining low-tuning gain, a wide regulating range, and good phase noise performance. In addition, a coplanar waveguide linear inductor used in the voltage-controlled oscillator has a high quality factor in order to achieve better phase noise performance. A circuit directly outputs a differential orthogonal signal with a high orthogonal precision (less than 1 degree). The phase noise of the voltage-controlled oscillator may reach -107.3dBc / Hz and -129.6dBc / Hz at the frequency offset 1MHz and 10MHz at the center frequency 30GHz, respectively. The voltage-controlled oscillator has total power consumption of 80mW, and can be used as a local oscillation signal source in a Ka-band wireless communication system or a voltage-controlled oscillator in a frequency synthesizer.

Description

technical field [0001] The invention belongs to the technical field of millimeter-wave integrated circuit design, in particular to a fully integrated Ka-band millimeter-wave quadrature voltage-controlled oscillator with low gain and wide tuning range of complementary metal oxide semiconductors, which can be used in high-speed wireless communication systems with complex modulation. Background technique [0002] In recent years, with the rapid growth of demand for broadband services, especially broadband multimedia services, low-band wireless communication systems such as L-band (1-2GHz) or C-band (4-8GHz) have become saturated, and lower-band It cannot adapt to high-speed, large-bandwidth communication systems, which forces scholars at home and abroad to turn to research on wireless communication in the millimeter wave band (30-300GHz). [0003] The millimeter wave band has an extremely wide bandwidth, which is undoubtedly very attractive in today's tight frequency resources....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03B5/32
CPCH03B5/32
Inventor 张润曦石春琦何钰娟
Owner EAST CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com