WC-Co-Si-Ti nanometer coating and preparing method thereof
A nano-coating, wc-co-si-ti technology, applied in the direction of coating, nanotechnology, metal material coating process, etc., can solve the problems of low hardness and poor wear resistance of the coating, and achieve high hardness and performance. Excellent, good wear resistance effect
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Embodiment 1
[0015] A WC-Co-Si-Ti nano-coating, its components and the mass parts of each component are WC accounts for 35 parts, Co accounts for 25 parts, Si accounts for 26 parts, Ti accounts for 20 parts, and trace elements account for 0.5 parts .
[0016] The trace elements are B, Cr, Mn and C, and the mass ratio of B, Cr, Mn and C is 1:0.5:0.8:1.
[0017] A preparation method of WC-Co-Si-Ti nano-coating, comprising the following steps:
[0018] (1) The nanospheres of WC-Co-Si-Ti are obtained by dry pulverization;
[0019] (2) The nanospheres prepared in step (1) are mixed and ground with B, Cr, Mn and C by a surfactant protection method to obtain a mixed powder;
[0020] (3) Prepare WC-Co-Si-Ti nano-coating on the surface of workpiece by using the nano-powder prepared in step (2) by plasma spraying process.
Embodiment 2
[0022] A WC-Co-Si-Ti nano-coating, its components and the mass parts of each component are WC accounts for 55 parts, Co accounts for 35 parts, Si accounts for 37 parts, Ti accounts for 35 parts, and trace elements account for 1 part .
[0023] The trace elements are B, Cr, Mn and C, and the mass ratio of B, Cr, Mn and C is 1:0.5:0.8:1.
[0024] A preparation method of WC-Co-Si-Ti nano-coating is the same as that of Embodiment 1.
Embodiment 3
[0026] A WC-Co-Si-Ti nano-coating, its components and the mass parts of each component are WC accounts for 40 parts, Co accounts for 30 parts, Si accounts for 30 parts, Ti accounts for 25 parts, and trace elements account for 0.8 parts .
[0027] The trace elements are B, Cr, Mn and C, and the mass ratio of B, Cr, Mn and C is 1:0.5:0.8:1.
[0028] A preparation method of WC-Co-Si-Ti nano-coating is the same as that of Embodiment 1.
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