A kind of preparation method of high-efficiency crystalline silicon perc battery

A crystalline silicon and battery technology, applied in the field of high-efficiency crystalline silicon PERC battery preparation, can solve the problems of poor ohmic contact and low battery efficiency

Active Publication Date: 2018-03-23
CHINT NEW ENERGY TECH (HAINING) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In order to solve the problem of poor ohmic contact and low battery efficiency on the back of the passivated battery, the invention provides a method for preparing a high-efficiency crystalline silicon PERC battery

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  • A kind of preparation method of high-efficiency crystalline silicon perc battery
  • A kind of preparation method of high-efficiency crystalline silicon perc battery

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Embodiment Construction

[0032] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. It should be noted that components illustrated in the figures are not necessarily drawn to scale. Descriptions of well-known components and processing techniques and processes are omitted herein to avoid unnecessarily limiting the present invention.

[0033] refer to figure 1 with figure 2 A method for preparing a high-efficiency crystalline silicon PERC (emitter and back passivation) battery provided by the invention comprises steps:

[0...

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Abstract

The invention discloses a preparation method of an efficient crystalline silicon PERC cell. The preparation method comprises the steps of providing a silicon wafer and performing texturing on the silicon wafer; carrying out phosphorous diffusion or boron diffusion on the silicon wafer; etching the edge and emitters on the back surface of the silicon wafer and removing PSG or BSG; forming an antireflection layer on the front surface of the silicon wafer; forming a back passivation layer on the back surface of the silicon wafer; forming a back protection layer on the back surface of the silicon wafer; carrying out secondary laser ablation on a back electrode area, in which a back electrode needs to be formed, of the silicon wafer, and stripping the back passivation layer and the back protection layer to form a stripping area; and carrying out silk-screen printing on the back surface of the silicon wafer. By the preparation method disclosed by the invention, the contact resistance of a back passivation battery can be effectively reduced; the conversion efficiency of the back passivation battery is improved; and the reliability of a back passivation assembly can be significantly improved.

Description

technical field [0001] The invention belongs to the field of solar cell preparation, and in particular relates to a method for preparing a high-efficiency crystalline silicon PERC cell. Background technique [0002] Back passivation technology is an important technical means to realize high-efficiency polysilicon cells. The back passivation technology is to coat a passivation film on the back of the solar cell. Due to the high density of fixed negative charges inside the film, it has good field passivation and chemical passivation effects, so it can make the back of the solar cell carry current. The sub-recombination rate is effectively reduced, and the minority carrier lifetime of the crystalline silicon cell is improved, thereby improving the light conversion efficiency of the crystalline silicon cell. [0003] In the back passivated cell structure, there are two dielectric layers on the back of the solar cell, an aluminum oxide passivation layer and a silicon nitride pro...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0216H01L31/068
CPCH01L31/02167H01L31/02168H01L31/068H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 权微娟单伟王娟李旺王仕鹏黄海燕陆川
Owner CHINT NEW ENERGY TECH (HAINING) CO LTD
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