Manufacturing method of thin-film thermoelectric semiconductor device by employing ceramic thin film as base material

Abstract

The invention provides a method for manufacturing a high-temperature resistant thin-film thermoelectric semiconductor device by employing a ceramic thin film base material. Heavily doped P-type and N-type thermoelectric semiconductor materials are manufactured into thermoelectric semiconductor powder material slurry; meanwhile, ceramic slurry and internal conductive material slurry which are similar to a specific thermoelectric semiconductor material in solid crystal characteristics and physical parameters of thermal expansion coefficient and the like are prepared; a ceramic thin film with a required thickness is prepared through a tape casting technology and is cut into the specified size and shape (5); an inner conductive electrode (6) and N-type (8) and P-type (9) thermoelectric semiconductor materials are printed on the ceramic thin film; and the thin-film thermoelectric semiconductor device employing the ceramic thin film as the base material is manufactured through isostatic pressing, rubber discharging and sintering technologies.

Description

technical field [0001] The invention relates to the manufacturing technology of a novel thin-film thermoelectric semiconductor device. Background technique [0002] For the basic structure of traditional thermoelectric semiconductor devices, see figure 1 , consisting of N-type thermoelectric semiconductor elements (1) and P-type thermoelectric semiconductor elements (2), through conductors (3) and (4), the N-type and P-type thermoelectric semiconductor elements are electrically connected in series to form a common refrigeration thermopile , A thermopile composed of a pair of N-type and P-type thermoelectric semiconductor elements is usually called a pair of thermocouples. [0003] The thermocouple element grains of traditional thermoelectric semiconductor devices are made by cutting and grinding a large piece of semiconductor material into a specific size, and then welding according to the above-mentioned structural sequence. The distance between the cold end and the hot en...

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Problems solved by technology

[0004] In other words, the temperature difference index between the external cold end and the hot end (usually with a distance of 2-5 mm) displayed by traditional thermoelectric semiconductor devices is the result of the balance of heat exchange (cold and heat offset) inside the thermoelectric element material, which is It is also the main reason that restricts the overall performance of thermoelectric devices. Trying to reduce the impact of internal heat exchange on the performance indicators of thermoelectric devices is the key direction of thermoelectric materials research in the entire thermoelectric semiconductor industry. For example, changing the grain size of thermoelectric materials, changing the The phonon scattering mechanism, the use of nanotechnology to change the dimension of the material, the quantum tunneling effect of the limited material, and the production of nano-films, etc., are all to reduce the thermal conductivity inside the material, so as to improve the figure of merit of the thermoelectric material. However, Due to the structural characteristics of traditional thermoelectric semiconductor devices, the above efforts have had little effect, which restricts the popularization and application of thermoelectric technology

[0005] Due to the inherent defects of traditional thermoelectric semiconductor devices made of bulk materials, it is difficult to further improve the overall performance of thermoelectric devices. The industry has turned the research direction to the research of thermoelectric thin film devices. The research results show that the comprehensive physical properties of thin film thermoelectric materials are better than those of bulk materials. , has development prospects, but one of the key constraints for thin-film devices not to form an industry is that the thin-film substrates used to grow semiconductor materials are difficult to solve. binding strength etc.

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