Method for preparing In2O3 polyhedral micro-grains
A polyhedral, microcrystalline technology, applied in chemical instruments and methods, gallium/indium/thallium compounds, inorganic chemistry, etc., can solve the problems of low yield, inability to test photoelectric catalytic performance, etc., and achieve a simple preparation method and stable photoelectrochemistry. Catalytic performance, simple effect of subsequent treatment
Inactive Publication Date: 2016-11-16
NANJING UNIV
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However, these polyhedrons appear at the same substrate surface at the same time, and the yield is low, so it is impossible to test their photoelectrocatalytic performance.
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[0022] Example: 350mg of high-purity In 2 o 3 The powder was thoroughly mixed with 150mg of graphite powder, ground in an agate mortar for 10min, and then evenly spread in alumina boats. Put this alumina boat into a small-diameter quartz tube (inner diameter: 1.6 cm, length: 20 cm), and then put the small quartz tube system as a whole into a horizontal CVD furnace tube. The Si wafer coated with 10nm thick Au film was used as the substrate for collecting samples. During the reaction, the carrier gas is a mixture of high-purity argon and oxygen, wherein the volume ratio of argon is 98%, the volume ratio of oxygen is 2%, and the flow rate is 150 sccm (standard-state cubic centimeter perminute). Place the Si substrate coated with Au film 1.5cm away from the alumina boat, and put it into a small quartz tube with an inner diameter of 1.6cm at the same time, and put it into the furnace tube together. In polyhedral In 2 o 3 During the growth of micron particles, the furnace tempe...
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The invention discloses a method for preparing In2O3 polyhedral micro-grains. The method for preparing the In2O3 polyhedral micro-grains by using a chemical vapor deposition technology comprises the steps: firstly, milling 300mg of high-purity In2O3 powder and 150mg of carbon powder in a mortar for 10+ / -5 minutes so as to thoroughly mix the high-purity In2O3 powder and the carbon powder; then, putting the mixture into a chemical vapor deposition tube, and placing a Si wafer, of which the surface has an Au film with the thickness of 10nm to 50nm, at a place which is behind the mixture by 1.5cm, wherein the Si wafer serves as a substrate for collecting a sample; and finally, introducing 98% of Ar gas and 2% of O2 gas into the deposition tube as carrier gas, carrying out a reaction for 3+ / -1 hours at the set temperature (920 DEG C to 1,000 DEG C), cooling the deposition tube to room temperature, then, taking out the Si substrate, and obtaining the In2O3 polyhedral micro-grains from the surface of the substrate.
Description
technical field [0001] The invention belongs to the category of chemical vapor deposition preparation methods, and relates to a method for precisely regulating In 2 o 3 Methods and applications of microcrystalline morphology. Background technique [0002] The exposed specific crystal faces of inorganic functional semiconductor materials have attracted much attention due to their unique physical and chemical properties, and have great potential application value in the fields of photocatalysis, dye-sensitized batteries, gas detection and lithium-ion batteries. The synthesis of micro-nano functional materials with a high proportion of exposed specific crystal faces is gradually becoming one of the research hotspots in the preparation technology of micro-nano materials. [0003] In the field of photoelectrocatalysis, crystal planes with different surface atomic arrangements not only have different catalytic active sites, but also can change the barrier height of the semicondu...
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Login to View More IPC IPC(8): C01G15/00
CPCC01G15/00C01P2004/03C01P2002/72C01P2004/61
Inventor 孟明吴兴龙沈剑沧
Owner NANJING UNIV