Preparation method for two-dimensional laminar heterojunction based on graphene

A two-dimensional layered and graphene technology is applied in the field of preparation of two-dimensional layered heterojunctions, which can solve the problems of poor material uniformity and complicated steps, and achieve the effects of reducing impurities, improving growth efficiency, and reducing production costs.

Active Publication Date: 2016-11-23
RENMIN UNIVERSITY OF CHINA
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  • Abstract
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Problems solved by technology

The steps are cumbersome, and the uniformity of the material prepared by this method is poor

Method used

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  • Preparation method for two-dimensional laminar heterojunction based on graphene
  • Preparation method for two-dimensional laminar heterojunction based on graphene
  • Preparation method for two-dimensional laminar heterojunction based on graphene

Examples

Experimental program
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Effect test

Embodiment 1

[0048] Embodiment 1, prepare graphene / boron nitride heterojunction on Pt sheet

[0049] The method of the present invention prepares the CVD growth schematic diagram and the growth schematic diagram of graphene / boron nitride heterojunction respectively as follows figure 1 with figure 2 shown.

[0050] Base preparation:

[0051] Cut a Pt sheet of appropriate size as a substrate, and use acetone, alcohol, and deionized water for ultrasonic cleaning in order to remove impurities and organic matter on the surface.

[0052] Fabrication of graphene / boron nitride heterojunction:

[0053] First, weigh 3 mg of ammonia borane and place it in a U-shaped quartz boat with one end closed; put the prepared Pt sheet (3cm×3cm) and ammonia borane reaction source into the CVD quartz tube, and the position of the Pt sheet is for heating In the middle of the area, the position of the ammonia borane source is 35cm away from the Pt sheet at the inlet end; secondly, vacuumize the quartz tube to ...

Embodiment 2

[0063] Embodiment 2, prepare graphene / boron nitride heterojunction on Cu-Ni alloy

[0064] Because the carbon solubility of Cu-Ni alloy and Pt is different, the preparation parameters are adjusted, mainly the flow rate of methane and the cooling process.

[0065] According to the preparation method in Example 1, the same preparation process is adopted, except that in the process of carbon dissolution, CH 4 :H 2 The ratio is 5sccm: 10sccm; in addition, in the final carbonization step, the temperature is slowly lowered to 900°C at a rate of 26°C / min and then rapidly lowered.

[0066] The SEM image of the graphene / boron nitride heterojunction prepared in this embodiment is as follows Figure 10 Shown, as can be seen from this figure, are sub-monolayer boron nitride (dark quadrilaterals) and monolayer graphene.

[0067] The optical picture of the graphene / boron nitride heterojunction prepared in this embodiment is as follows Figure 11 As shown, it can be seen from the figure ...

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Abstract

The invention discloses a preparation method for a two-dimensional laminar heterojunction based on graphene. The preparation method includes the following steps that 1, hydrogen and carbon source gas are introduced into a reaction cavity with a metal substrate, and the reaction cavity is heated to make carbon dissolved in the metal substrate; 2, the carbon source gas is stopped from being introduced into the reaction cavity, and the reaction source is heated to grow on the metal substrate; 3, the temperature of the reaction cavity is reduced, carbon dissolved in the metal substrate is separated out and forms graphene, and then the two-dimensional laminar heterojunction based on graphene is obtained. According to the preparation method, a two-dimensional material like boron nitride or molybdenum disulfide is directly deposited on the surface of the transition metal substrate, and the thickness of graphene separated out at the low temperature is controlled with the carbon solubility difference of metal at different temperatures. By means of the preparation method, the growth efficiency is improved, the production cost is lowered, and impurities introduced in the preparation process are reduced.

Description

technical field [0001] The invention relates to a preparation method of a two-dimensional layered heterojunction, in particular to a preparation method of a graphene-based two-dimensional layered heterojunction. Background technique [0002] Since 2004, graphene materials have caused an unprecedented research upsurge in both theoretical and applied research with its unique two-dimensional atomic structure and excellent physical and chemical properties. Graphene research has also opened the door to 2D materials, sparking intense interest in other 2D layered nanomaterials with similar structures to graphene. So far, hundreds of two-dimensional materials have been discovered, including hexagonal boron nitride, black phosphorus, and transition metal sulfide and oxide materials. Among them, the single-layer hexagonal boron nitride has a wide band gap of 5.9eV, low dielectric constant, high thermal conductivity and other characteristics, and can be applied to the dielectric layer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
CPCC01P2002/85C01P2004/03C01P2004/80
Inventor 陈珊珊李秀婷
Owner RENMIN UNIVERSITY OF CHINA
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