Thin film transistor, its manufacturing method and display device
A technology of thin film transistors and semiconductors, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as degradation, low-temperature process is difficult to achieve, and amorphous silicon field-effect mobility is low, so as to delay degradation and stabilize The effect of increasing and reducing the frequency of light irradiation
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[0083] The embodiment of the present invention also discloses a method for preparing a thin film transistor, comprising the following steps:
[0084] providing a substrate;
[0085] forming a gate having a rough surface on the substrate, the rough surface being located on a side facing away from the substrate;
[0086] preparing a gate insulating layer;
[0087] preparing a semiconductor layer on the gate insulating layer, the projection of the semiconductor layer on the substrate is within the projection of the gate on the substrate;
[0088] A source electrode and a drain electrode are prepared to obtain a thin film transistor.
[0089] Further, forming a gate with a rough surface on the substrate includes the following steps:
[0090] depositing a gate metal layer on the substrate;
[0091] Performing micro-etching treatment on the gate metal layer to form a gate metal layer with a rough surface on the side away from the substrate, the roughness Ra of the surface is 20-...
Embodiment 1
[0116] Step 1, providing a substrate;
[0117] Wherein, the base substrate can be glass or quartz.
[0118] Step 2, forming a gate on the substrate;
[0119] Specifically, a gate metal layer with a thickness of about 300-400 nanometers may be deposited on the substrate after step 1 by sputtering or thermal evaporation, and the gate metal layer is Cu.
[0120] Step 3, using hydrogen peroxide with a mass concentration of 3% to corrode the gate metal layer for 2 minutes to form a gate metal layer with an uneven structure on the surface away from the substrate, and the surface roughness Ra is 20~ 100nm.
[0121] Step 4, forming a gate insulating layer on the substrate after step 3;
[0122] Specifically, the plasma-enhanced chemical vapor deposition (PECVD) method can be used to deposit a gate insulating layer on the substrate after step 3. The gate insulating layer can be selected from oxide, nitride or oxynitride compound, and the corresponding reaction gas is SiH 4 , NH 3 ...
Embodiment 2
[0128] Step 1, providing a substrate;
[0129] Wherein, the base substrate can be glass or quartz.
[0130] Step 2, forming a gate on the substrate;
[0131] Specifically, a gate metal layer with a thickness of about 300-400 nanometers may be deposited on the substrate after step 1 by sputtering or thermal evaporation, and the gate metal layer is Cu.
[0132] Step 3, using hydrogen peroxide with a mass concentration of 1% to corrode the gate metal layer for 1 minute to form a gate metal layer with an uneven structure on the surface away from the substrate, and the surface roughness Ra is 20~ 100nm.
[0133] A transparent conductive layer is deposited on the surface of the gate metal layer with a rough surface, and the transparent conductive layer adopts indium tin oxide. A patterning process is performed on the gate metal layer and the transparent conductive layer to form a gate with a rough surface and the buffer layer covering the gate.
[0134] Step 4, forming a gate in...
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