Method and apparatus for continuous production of flexible micro-nano metal network transparent conductive film

Abstract

The invention discloses a method and apparatus for continuous production of a flexible micro-nano metal network transparent conductive film. The method comprises the steps of: continuously conveying a flexible substrate to undergo pre-cleaning, air drying, atmospheric pressure plasma cleaning, cracking liquid coating and heating in order, thus forming a craquelure template on the flexible substrate; placing the flexible substrate in a vacuum chamber and performing vacuum pumping on the vacuum chamber; subjecting the flexible substrate to secondary plasma cleaning, then coating a compact metal film, and filling the craquelures on the craquelure template with a metal film material in the process so as to obtain a flexible micro-nano metal network transparent conductive film semi-finished product; releasing vacuum, taking out the semi-finished product from the vacuum chamber, and removing the craquelure template from the flexible substrate, thus obtaining the product. The method and apparatus provided by the invention realize continuous and large-area production of the flexible micro-nano metal network transparent conductive film. The film coating mode is suitable for industrial automatic continuous magnetron sputtering production lines, can greatly shorten the production cycle, and substantially improves the productivity.

Description

technical field [0001] The present invention relates to transparent conductive film technology, in particular to a method for continuous production of flexible micro-nano metal network transparent conductive film, which can realize industrialized large-area continuous production of flexible micro-nano metal network transparent conductive film, and also relates to special equipment for realizing the method . Background technique [0002] At present, with the rapid development of optoelectronic devices and equipment such as touch screens, solar cells, smart windows, and flat panel displays, there is an increasing demand for transparent electrode materials with low resistance and high light transmission properties. [0003] Indium tin oxide (ITO) is an N-type oxide semiconductor material and one of the main materials of traditional transparent electrodes. The advantages of ITO are: good light transmission, good chemical stability, easy to etch into electrode patterns, etc., bu...

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Problems solved by technology

The advantages of ITO are: good light transmission, good chemical stability, easy to etch into electrode patterns, etc., but the defects that ITO is difficult to overcome are: (1) high cost of vacuum coating and low coating rate, large initial investment in fixed assets (requires construction Large-scale vacuum coating equipment line); (2) The metal oxide of ITO is brittle, making it impossible to use flexible devices and equipment; (3) The most important point is that the raw material used in ITO is the rare metal indium, and the world reserves of indium are very low, which makes the price of ITO continue to rise. As it rises, there will be a danger of running out; (4) ITO waste electronic products are not easy to recycle, indium is toxic, and the recycling cost is high

[0005] China's authorized invention patent (ZL201310122824.1) discloses a method for preparing porous metal thin film transparent conductive electrodes based on the crack template method. It exceeds the traditional ITO electrode and has good flexibility. However, this method is a laboratory small-scale preparation method of submicron metal network transparent conductive film. This preparation method is limited to small-area intermittent use in the laboratory and the production cycle is long. , low production efficiency, and high cost, cannot be applied to industrialized automatic continuous magnetron sputtering production lines

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