Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of preparation method of orientation ito thin film

A thin film and orientation technology, applied in metal material coating process, coating, liquid chemical plating and other directions, can solve the problems of reducing the resistivity of the film and increasing the carrier concentration of the ITO film, achieving short preparation time and adaptability. strong effect

Inactive Publication Date: 2019-01-11
XIAN UNIV OF TECH
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

According to reports, the photoelectric properties of ITO films are related to the growth of ITO grains. It has been reported that ITO films with (100) planes can be grown in an oxygen-poor environment. This kind of ITO films has more oxygen vacancies, which can increase Carrier concentration in the ITO film, which can reduce the resistivity of the film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of orientation ito thin film
  • A kind of preparation method of orientation ito thin film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0018] The preparation method of orientation ITO thin film of the present invention, specifically implement according to the following steps:

[0019] Step 1, the InCl 3 4.5H 2 O, SnCl 4 ·5H 2 O. Mix the solvent and deionized water, put it into a high-pressure reactor with a temperature of 50-70°C and a reaction pressure of 0.4MPa to react for 1-2 hours to obtain an ITO spraying liquid;

[0020] In the ITO spraying liquid, the molar concentration of In element in the spraying liquid is 0.2-1.0mol / L, and the molar ratio of Sn element to In element is 0.09-0.11:1; the content of deionized water is 2-2% of the total volume of ITO spraying liquid. 10%; Alcohol is one of methanol, ethanol, anhydrous methanol, anhydrous ethanol, isopropanol or n-butanol, or a mixture of any several in any proportion. The amount of solvent added ensures that the concentration of the entire sol is between 0.2 and 1.0 mol / L.

[0021] Step 2, deposit the ITO spraying solution obtained in step 1 on ...

Embodiment 1

[0023] 30g of InCl 3 4H 2 O, 3.8g of SnCl 4 ·5H 2 O with 10ml of H 2 O. 500ml of dehydrated ethanol is mixed and placed in a high-pressure reactor at 60° C. and stirred for about 1 hour until a light green 0.2mol / L transparent ITO spray solution is obtained. The molar concentration of In element in the mixed solution is 0.2mol / L, the molar ratio of Sn element to In element is 0.1:1, and the content of deionized water is 5% of the total volume of the ITO spraying solution.

[0024] The ITO spray solution was used in the process of preparing ITO glass by spray pyrolysis, the deposition temperature was 400° C., and the carrier gas was air to obtain an ITO film.

[0025] The average film thickness of the transparent conductive glass of the tin-doped indium oxide thin film (ITO thin film) that embodiment 1 makes is 320nm, and average light transmittance is 81.0% (substrate average transmittance is 88.6%), resistivity is 3.81 ×10 -4 Ω·cm.

[0026] Among them, the thin film cr...

Embodiment 2

[0028] 30g of InCl 3 4H 2 O, 3.8g of SnCl 4 ·5H 2 O with 35ml of H 2 O. 500ml of dehydrated ethanol was mixed and placed in a high-pressure reactor at 70°C and stirred for about 2 hours until a light green 0.2mol / L transparent ITO spray solution was obtained. The molar concentration of In element in the mixed solution is 0.8mol / L, the molar ratio of Sn element to In element is 0.1:1, and the content of deionized water is 2% of the total volume of the ITO spraying solution.

[0029] The ITO spray solution was used in the process of preparing ITO glass by spray pyrolysis, the deposition temperature was 350° C., and the carrier gas was nitrogen to obtain an ITO film.

[0030] The average film thickness of the transparent conductive glass of the tin-doped indium oxide thin film that embodiment 2 makes is 310nm, and average light transmittance is 81.0% (substrate average transmittance is 88.6%), and resistivity is 3.08 * 10 -4 Ω·cm.

[0031] Among them, the thin film crystal ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electrical resistivityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparing method for an oriented ITO film. InCl3.4.5H2O, SnCl4.5H2O, a solvent and deionized water are mixed and placed in a high-pressure reaction kettle to be subjected to the reaction, and ITO spraying liquid is obtained; and the ITO spraying liquid obtained in the first step is deposited on a glass substrate in an air atomization or ultrasonic atomization manner, and the oriented ITO film is obtained. The preparing method for the oriented ITO film has the following beneficial effects that the sol preparing time is short and ranges from 1 h to 2 h; secondly, the (100) orientation ITO glass can be deposited on ordinary soda-lime glass through sol, wherein the thickness of the soda-lime glass is smaller than 5 mm, the average transmittance of the soda-lime glass is 88.6%, the electrical resistivity of the (100) orientation ITO glass is 3*104 omega.cm, the visible light average transmittance is 82%, and adaptability to the deposition environment is high.

Description

technical field [0001] The invention belongs to the technical field of preparation of transparent semiconductor thin films, and in particular relates to a preparation method of an oriented ITO thin film. Background technique [0002] Indium tin oxide thin film (ITO) has good photoelectric properties and is often used as the back electrode of various electrical devices. At present, commercial ITO thin films are mostly prepared by magnetron sputtering. Due to the rise of research on the application of functional architectural glass in recent years, and the required size is generally large, the method of atomic-level deposition using a vacuum system, such as magnetron sputtering, has limitations in the preparation of large-sized uniform films. Spray pyrolysis technology can prepare large-area and uniform-thickness films by increasing the number of spray guns. However, the photoelectric properties of ITO thin films prepared by this technology are not high, and it is difficult t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/12
CPCC23C18/1216C23C18/1258
Inventor 赵高扬高赟任洋
Owner XIAN UNIV OF TECH