Method for reducing defect generation in SiC crystal growth

A crystal growth and defect technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of gas phase substance escape, achieve the effect of improving quality and yield, and reducing hexagonal void defects

Active Publication Date: 2016-12-21
HEBEI SYNLIGHT CRYSTAL CO LTD
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AI Technical Summary

Problems solved by technology

The presence of pores in the graphite cap will cause the gaseous species accumulated in the gas hole area on the back side of the seed to escape

Method used

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Embodiment Construction

[0016] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further analyzed below in conjunction with specific implementation.

[0017] A method to reduce defects in SiC crystal growth is to make further improvements on the basis of the commonly used Physical Vapor Transport Method (Physical Vapor Transport Method) to grow silicon carbide single crystals. Silicon carbide single crystal polytypes include 3C-SiC, 4H-SiC, 6H-SiC and 15R-SiC. In order to eliminate the hexagonal void defects in SiC crystals, the adhesive was improved, and a new type of graphite glue was formulated and its use, including:

[0018] (1) Prepare graphite glue; mix graphite powder and binder uniformly in proportion, the ratio is selected between 1:2-10, and the binder is a commonly used binder in single crystal preparation;

[0019] (2) Use a single-sided blade to evenly coat the graphite glue on the non-growth ...

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Abstract

The invention relates to a method for reducing defect generation in SiC crystal growth. Further improvement is made on the basis of silicon carbide single crystal growth by common physical vapor transport technique, and the method includes: (1) preparing graphite glue; (2) applying the graphite glue uniformly to a seed crystal non-growth surface and a bonding surface of a graphite plate with single-side blade, then overlapping the graphite glue coated two surfaces together, and bonding the graphite plate and the seed crystal well with as few graphite glue as possible; and (3) performing heating to cure the graphite glue. The method provided by the invention solves the problem that the thermal conductivity difference between air vents and a high temperature carbonized adhesive can result in non-uniform temperature distribution on the back of the seed crystal, reduces the hexagonal cavity defect caused by back evaporation in the process of crystal growth, and greatly improves the quality and yield of silicon carbide crystals.

Description

technical field [0001] The invention relates to a SiC single crystal capable of stably growing low hexagonal void defects, in particular to a method for reducing defects during SiC crystal growth, and belongs to the field of industrial crystal preparation. Background technique [0002] Wide bandgap semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN) are the third-generation semiconductors after silicon (Si) and gallium arsenide (GaAs). Compared with Si and GaAs traditional semiconductor materials, SiC has excellent properties such as high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy, and has great potential in high temperature, high frequency, high power and radiation resistant devices. Application prospect. In addition, due to the similar lattice constant and thermal expansion coefficient of SiC and GaN, it also has extremely broad application prospects in the field of op...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B29/36
Inventor 郑清超杨坤
Owner HEBEI SYNLIGHT CRYSTAL CO LTD
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