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Heterojunction cell with thermal oxidation improved passivation layer interface and preparation method of heterojunction cell

A technology of thermal oxide layer and heterojunction, which is applied in the field of solar cells, can solve the problems of low conversion efficiency of solar cells and reduced minority carrier life, and achieve the effect of improving surface defect structure, increasing minority carrier life, and reducing recombination centers

Inactive Publication Date: 2016-12-21
TRINASOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the existence of various defects on the surface of single crystal silicon wafers, it becomes the recombination center of carriers. These recombination centers reduce the lifetime of minority carriers and make the conversion efficiency of solar cells low.

Method used

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  • Heterojunction cell with thermal oxidation improved passivation layer interface and preparation method of heterojunction cell
  • Heterojunction cell with thermal oxidation improved passivation layer interface and preparation method of heterojunction cell

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Embodiment 1

[0023] like figure 1 As shown, an N-type crystalline silicon substrate is taken as an example for illustration. The thermal oxidation of the present invention improves the cross-section of the passivation layer heterojunction solar cell, including: N-type crystalline silicon substrate 1, N-type crystalline silicon substrate 1 The thickness is 50-200um, and the resistivity is ~5Ω·cm; it has a front side and a back side, and is sequentially arranged on the front side of the N-type crystalline silicon substrate 1: thermal oxide layer 2, intrinsic amorphous silicon thin film layer 3, N Type doped layer, that is, the front doped layer 4, the transparent conductive film layer 5 and the front metal gate line 6; on the back of the N-type crystalline silicon substrate 1 are arranged in sequence: thermal oxide layer 2, intrinsic amorphous silicon film layer 3 , P-type doped layer, that is, the back doped layer 7 , the transparent conductive film layer 5 and the back metal grid line 8 . ...

Embodiment 2

[0025] like figure 1 , 2 As shown, taking an N-type crystalline silicon substrate as an example for illustration, the method for preparing a heterojunction solar cell with improved passivation layer cross-section by thermal oxidation of the present invention includes the following steps:

[0026] S1: surface treatment: perform standard RCA cleaning on the N-type crystalline silicon substrate 1, and treat it with HF solution for 2 minutes before performing PECVD;

[0027] S2: Prepare a thermal oxide layer: put the substrate treated in step S1 into a holding furnace, and hold it at 120°C under normal pressure for 10 minutes in an air atmosphere, and grow a 1-5nm oxide layer on the front and back of the substrate respectively;

[0028] S3: Preparing a doped layer: depositing an N-type doped layer and a P-type doped layer on the intrinsic amorphous silicon film layer on the front and back of the N-type crystalline silicon substrate 1, respectively;

[0029] S4: Prepare a transpa...

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Abstract

The invention relates to a heterojunction solar cell with a thermal oxidation improved passivation layer interface. The heterojunction solar cell comprises a crystal silicon substrate (1) which is provided with a front surface and a back surface. The heterojunction solar cell is characterized in that the front surface of the crystal silicon substrate (1) is provided with a thermal oxidation layer (2), an intrinsic amorphous silicon thin film layer (3), a front surface doped layer (4), a transparent conductive film layer (5) and front surface metal gate lines (6) sequentially; and the back surface of the crystal silicon substrate (1) is provided with a thermal oxidation layer (2), an intrinsic amorphous silicon thin film layer (3), a back surface doped layer (7), a transparent conductive film layer (5) and back surface metal gate lines (8) sequentially. The invention also discloses a preparation method of the heterojunction solar cell. With the heterojunction solar cell and the preparation method adopted, the surface defect of a monocrystalline silicon sheet can be eliminated, a better passivation effect can be obtained, the minority carrier life time of the heterojunction solar cell can be prolonged, and the conversion efficiency of the cell can be improved.

Description

technical field [0001] The invention relates to a heterojunction solar cell, in particular to a heterojunction solar cell designed to improve the interface of a passivation layer by thermal oxidation and a preparation method thereof, belonging to the technical field of solar cells. Background technique [0002] Passivation of solar cells is a major way to improve cell efficiency, and the passivation effect of the passivation layer in amorphous silicon heterojunction cells is particularly important. Due to the existence of various defects on the surface of a single crystal silicon wafer, it becomes a recombination center of carriers, which reduces the lifetime of minority carriers and makes the conversion efficiency of solar cells low. Improving the passivation effect of the passivation layer has always been a research direction for heterojunction cells. Contents of the invention [0003] The purpose of the present invention is to provide a heterojunction solar cell and it...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/076H01L31/20
CPCH01L31/02167H01L31/076H01L31/202H01L31/208Y02E10/548Y02P70/50
Inventor 孙晨光包健
Owner TRINASOLAR CO LTD
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