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Solar battery with functional areas prepared by means of digital-exponential hybrid doping mode and preparation method of solar battery

A solar cell and exponential doping technology, applied in the field of solar cells, can solve the problems of low separation efficiency, limited effective electric field strength, and restriction of cell performance, and achieve the effects of improving mobility, reducing hysteresis effect, and reducing recombination rate

Active Publication Date: 2016-12-21
SHANGHAI INST OF SPACE POWER SOURCES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the effective electric field strength formed by this uniform doping in the battery structure is limited, resulting in low separation efficiency of photogenerated electron-hole pairs, which restricts the further improvement of battery performance.

Method used

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  • Solar battery with functional areas prepared by means of digital-exponential hybrid doping mode and preparation method of solar battery
  • Solar battery with functional areas prepared by means of digital-exponential hybrid doping mode and preparation method of solar battery
  • Solar battery with functional areas prepared by means of digital-exponential hybrid doping mode and preparation method of solar battery

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Effect test

Embodiment 1

[0023] Such as image 3 As shown, taking the GaInP single-junction solar cell grown in the forward direction as an example, the GaAs buffer layer 2 is epitaxially grown on the GaAs (gallium arsenide) substrate 1 first, and then the AlGaInP (aluminum gallium indium phosphide) back field 3 is grown sequentially, and the GaInP Base region 4, GaInP emitter region 5, AlInP (aluminum indium phosphorus) window layer 6, GaAs cap layer 7. The structure was grown using low-pressure metal-organic chemical vapor deposition (LP-MOCVD) equipment. In the back field, base area and emitter area of ​​the battery structure, digital-exponential doping is used for doping, in which the back field adopts such as figure 1 The negative exponential doping, that is, the doping concentration is decreasing; the base area adopts such as figure 2 The positive exponential doping, that is, the doping concentration increases; the emitter adopts such as figure 2 The positive exponential doping, that is, th...

Embodiment 2

[0025] Such as Figure 4 As shown, taking the reverse grown GaInP single-junction solar cell as an example, the GaAs buffer layer 20 is epitaxially grown on the GaAs (gallium arsenide) substrate 10 first, and then the AlInP (aluminum indium phosphide) window layer 30 is grown sequentially, and the GaInP emitter region 40 , GaInP base region 50 , AlGaInP (aluminum gallium indium phosphide) back field 60 , and GaAs contact layer 70 . The structure was grown using low-pressure metal-organic chemical vapor deposition (LP-MOCVD) equipment. The emitter region, the base region and the back field of the cell structure are doped by digital-exponential doping, wherein the emitter region is figure 1 The negative exponential doping, that is, the doping concentration is decreasing; the base area adopts such as figure 1 Negative exponential doping, that is, the doping concentration decreases; the back field adopts such as figure 2 The positive exponential doping, that is, the doping con...

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Abstract

The invention discloses a solar battery with functional areas prepared by means of a digital-exponential hybrid doping mode and a preparation method of the solar battery. According to the preparation method, the functional areas of the solar battery are prepared through a digital doping and exponential doping cooperated mode. According to the digital doping and exponential doping cooperated mode, digital doping is carried out on a doping area sectionally, and a dopant is doped into a reaction chamber, the flow rate of the dopant going through digital jump; and exponential change occurs between two adjacent doping concentrations. According to the solar battery using the digital-exponential hybrid doping mode, the digital-exponential hybrid doping mode is adopted to form the main functional layers of the solar battery, so that an enhanced built-in electric field can be formed, and more effective separation of photo-generated carriers can be prompted. With the solar battery adopted, the lifetime of the photo-generated carriers can be prolonged remarkably, so that the mobility of the carriers can be improved; and the open-circuit voltage of the battery can be improved significantly; and a solid foundation can be laid for the development of next-generation ultra-efficient solar batteries.

Description

technical field [0001] The invention relates to a solar cell, in particular to a solar cell which adopts a digital-exponential mixing method to dope a functional region. Background technique [0002] A solar cell is a device that directly converts natural solar energy into electrical energy that can be used by humans. It is one of the most potential ways to use green energy. Compared with traditional silicon solar cells, solar cells made of III-V semiconductor materials have the advantages of high conversion efficiency, strong radiation resistance, and good temperature characteristics, and are recognized as a new generation of high-performance and long-life space mainframes. Power supply has been widely used in aerospace field. With the continuous improvement of compound semiconductor growth technology (such as metal organic compound vapor phase epitaxy - MOCVD), the efficiency of III-V solar cells has been greatly improved, and the efficiency of multi-junction solar cells ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0304
CPCH01L31/03046H01L31/1844H01L31/0304H01L31/18Y02E10/544Y02P70/50
Inventor 陆宏波李欣益张玮杨丞张华辉陈杰张梦炎张建琴郑奕
Owner SHANGHAI INST OF SPACE POWER SOURCES
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