A kind of solar cell and its preparation method adopting digital-exponential mixing method to dope functional region

A solar cell and exponential doping technology, applied in the field of solar cells, can solve the problems of limited effective electric field strength, low separation efficiency, restricting cell performance, etc., and achieve the effects of reducing hysteresis effect, improving mobility, and reducing recombination rate.

Active Publication Date: 2018-01-19
SHANGHAI INST OF SPACE POWER SOURCES
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the effective electric field strength formed by this uniform doping in the battery structure is limited, resulting in low separation efficiency of photogenerated electron-hole pairs, which restricts the further improvement of battery performance.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of solar cell and its preparation method adopting digital-exponential mixing method to dope functional region
  • A kind of solar cell and its preparation method adopting digital-exponential mixing method to dope functional region
  • A kind of solar cell and its preparation method adopting digital-exponential mixing method to dope functional region

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Such as image 3 As shown, taking the GaInP single-junction solar cell grown in the forward direction as an example, the GaAs buffer layer 2 is epitaxially grown on the GaAs (gallium arsenide) substrate 1 first, and then the AlGaInP (aluminum gallium indium phosphide) back field 3 is grown sequentially, and the GaInP Base region 4, GaInP emitter region 5, AlInP (aluminum indium phosphorus) window layer 6, GaAs cap layer 7. The structure was grown using low-pressure metal-organic chemical vapor deposition (LP-MOCVD) equipment. In the back field, base area and emitter area of ​​the battery structure, digital-exponential doping is used for doping, in which the back field adopts such as figure 1 The negative exponential doping, that is, the doping concentration is decreasing; the base area adopts such as figure 2 The positive exponential doping, that is, the doping concentration increases; the emitter adopts such as figure 2 The positive exponential doping, that is, th...

Embodiment 2

[0025] Such as Figure 4 As shown, taking the reverse grown GaInP single-junction solar cell as an example, the GaAs buffer layer 20 is epitaxially grown on the GaAs (gallium arsenide) substrate 10 first, and then the AlInP (aluminum indium phosphide) window layer 30 is grown sequentially, and the GaInP emitter region 40 , GaInP base region 50 , AlGaInP (aluminum gallium indium phosphide) back field 60 , and GaAs contact layer 70 . The structure was grown using low-pressure metal-organic chemical vapor deposition (LP-MOCVD) equipment. The emitter region, the base region and the back field of the cell structure are doped by digital-exponential doping, wherein the emitter region is doped as figure 1 The negative exponential doping, that is, the doping concentration is decreasing; the base area adopts such as figure 1 Negative exponential doping, that is, the doping concentration decreases; the back field adopts such as figure 2 The positive exponential doping, that is, the d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A solar cell with functional areas prepared by a digital-exponential hybrid doping mode, and a method for preparing the solar cell. Functional areas of a solar cell are prepared by a digital doping and exponential doping cooperated mode. The digital doping and exponential doping cooperated mode refers to: digital doping is carried out sectionally in a doped region, the flow capacity of a dopant is doped into a reaction chamber in a digital transition, and an exponential change occurs between two adjacent doping concentrations. According to the solar cell prepared by a digital-exponential hybrid doping mode, the digital-exponential hybrid doping mode is used in the main functional layers of the solar cell, so that a built-in electric field can be enhanced, and photo-generated carriers can be separated more effectively, and the lifetime of the photo-generated carriers can be prolonged, thereby improving the mobility of the carriers, and increasing an open-circuit voltage of the cell.

Description

technical field [0001] The invention relates to a solar cell, in particular to a solar cell which adopts a digital-exponential mixing method to dope a functional region. Background technique [0002] A solar cell is a device that directly converts natural solar energy into electrical energy that can be used by humans. It is one of the most potential ways to use green energy. Compared with traditional silicon solar cells, solar cells made of III-V semiconductor materials have the advantages of high conversion efficiency, strong radiation resistance, and good temperature characteristics, and are recognized as a new generation of high-performance and long-life space mainframes. Power supply has been widely used in aerospace field. With the continuous improvement of compound semiconductor growth technology (such as metal organic compound vapor phase epitaxy - MOCVD), the efficiency of III-V solar cells has been greatly improved, and the efficiency of multi-junction solar cells ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0304
CPCH01L31/03046H01L31/1844H01L31/0304H01L31/18Y02E10/544Y02P70/50
Inventor 陆宏波朱凯李欣益张玮杨丞张华辉陈杰张梦炎张建琴郑奕
Owner SHANGHAI INST OF SPACE POWER SOURCES
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap