Interconnection brazing material and interconnection forming method thereof

A technology of brazing filler metal and phase composition, applied in the field of materials, can solve the problem of long time consumption of the transient liquid phase method, and achieve the effect of solving the problem of long time consumption, good air tightness and reducing Young's modulus

CN106271177AActive Publication Date: 2017-01-04HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2017-01-04

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Abstract

The invention provides an interconnection brazing material and an interconnection forming method thereof. The heating technological temperature of a product applied by the interconnection brazing material is T, the interconnection brazing material contains a component A with the melting point larger than T, a component B with the melting point smaller than T and a third-phase component C with the melting point larger than T; the third-phase component C accounts 0-30% the total mass of the component A, the component B and the third-phase component C. A compound AxBy is formed through a reaction between the component A and the component B at the heating technological temperature; the ratio of amounts of substances of the component A to the component B is larger than x / y, the third-phase component C does not react with the component A or the component B, the hardness of the third-phase component C is smaller than those of the component A, the component B and the compound AxBy. According to the technical scheme, a high-melting-point welding joint is obtained, and the Young modulus and the thermal expansion coefficient of a joint can be adjusted by adjusting the proportion of the components inside the brazing material.
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Description

technical field

[0001] The invention belongs to the technical field of materials, and in particular relates to an interconnect solder and an interconnect forming method thereof. Background technique

[0002] In recent years, wide and tight band semiconductors such as SiC, GaN, and InP have replaced Si with their superior electronic conversion performance and are widely used in automotive electronics, high-power LEDs, and other fields. These electronic devices can work in an environment higher than 250°C and maintain excellent characteristics. On the other hand, microelectronic chip bonding is developing rapidly in the direction of miniaturization, high density, and excellent electromechanical properties, which greatly increases the heat generated per unit area. Due to the limitation of the thermal conductivity of the material itself, the heat cannot be dissipated from the outside world in time. The exchange causes the operating temperature of the chip to become higher and h...

Examples

Embodiment 1

[0053] see figure 1 , figure 2 and Figure 4 As shown, a method for realizing a high melting point compound joint under an atmospheric environment, the connection method includes the following steps:

[0054] Ⅰ. Surface treatment of the materials to be connected: Use 1200# sandpaper to slightly polish the connection surface of the base material 1 and base material 3 3 to remove the oxide layer and oily impurities on the surface, and then immerse in absolute ethanol solution for ultrasonic cleaning 3 ~5min;

[0055] Ⅱ. Place the base material 33 on the lower layer, the base material 1 on the upper layer and the middle layer 2 in the middle to form a sandwich structure, the base material 1 and the base material 33 are placed horizontally and laterally. The base material 1 used above is a chip, the chip material is Si, SiC, GaN, InP or GaAs, the coating metal on the back of the chip is Ni, and the thickness of the Ni layer is 8 μm; the base material 3 3 is a pure Ni substrate...

Embodiment 2

[0063] See attached figure 1 , figure 2 and Figure 4 As shown, a method for quickly realizing a hybrid joint connection between a high melting point compound and a high melting point metal in an atmospheric environment, the connection method includes the following steps:

[0064] Ⅰ. Surface treatment of the materials to be connected: Use 1200# sandpaper to polish the surface of the connection surface of the base material 1 and base material 3 3 to remove oil and impurities on the surface, and then immerse in absolute ethanol solution for ultrasonic cleaning for 3-5 minutes.

[0065] Ⅱ. Place the base material 33 on the lower layer, the base material 1 on the upper layer and the middle layer 2 in the middle to form a sandwich structure, the base material 1 and the base material 33 are placed horizontally and laterally. The base material 1 used above is a chip, the chip material is Si, SiC, GaN, InP or GaAs, the coating metal on the back of the chip is Ni, and the thickness of...

Embodiment 3

[0072] see figure 1 and Figure 4 As shown, a method for quickly realizing the connection of high-melting point compounds, high-melting point metals and third-phase metal mixed tissue joints in an atmospheric environment, the connection method includes the following steps:

[0073] Ⅰ. Surface treatment of the materials to be connected: Use 1200# sandpaper to polish the surface of the connection surface of the base material 1 and base material 3 3 to remove oil and impurities on the surface, and then immerse in absolute ethanol solution for ultrasonic cleaning for 3-5 minutes.

[0074] Ⅱ. Place the base material 33 on the lower layer, the base material 1 on the upper layer and the middle layer 2 in the middle to form a sandwich structure, the base material 1 and the base material 33 are placed horizontally and laterally. The base material 1 used above is a chip, the chip material is Si, SiC, GaN, InP or GaAs, the coating metal on the back of the chip is Ni, and the thickness o...