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Polysilicon production technology

A production process and polysilicon technology, applied in silicon and other directions, can solve the problems of increasing production costs, increasing the workload of the exhaust gas recovery system, affecting the service life of the whole system, etc., to reduce the generation rate, improve the service life, and inhibit the decomposition reaction effect.

Active Publication Date: 2017-01-04
巴彦淖尔聚光硅业有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this production method improves the utilization efficiency of trichlorosilane, it produces a large amount of byproducts such as dichlorodihydrosilane, silicon tetrachloride, hydrogen chloride, hydrogen and incompletely reacted silicon tetrachloride, which will increase The workload of the exhaust gas recovery system affects the service life of the whole system and increases the production cost

Method used

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  • Polysilicon production technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Refined trichlorosilane and hydrogen are mixed in the bubbling vaporizer 2 at a molar ratio of 4:1. By controlling the pressure and temperature of the bubbling vaporizer 2, the generated raw gas is sent to the inlet and outlet gas heat exchanger 3. The purity of refined trichlorohydrogen is greater than 99.99%.

[0033] The raw material gas entering the inlet and outlet gas heat exchanger 3 exchanges heat with the high-temperature final tail gas from the auxiliary furnace 8 of the CVD reduction furnace, which not only increases the temperature of the raw gas but also reduces the temperature of the final tail gas.

[0034] After the raw material gas is heated by the final tail gas from the auxiliary furnace 8 of the CVD reduction furnace, it continues to enter the main furnace 4 of the CVD reduction furnace, and reacts on the surface of the silicon core at 1125°C in the main furnace 4 of the CVD reduction furnace to form polysilicon. The by-products of the main furnace 4...

Embodiment 2

[0050] This embodiment is basically the same as Embodiment 1, except that the refined trichlorosilane stored in the first storage tank 1 is mixed with hydrogen gas in a molar ratio of 3:1 in the bubbling vaporizer 2 . The refined trichlorosilane and dichlorodihydrosilane stored in the second storage tank 5 are mixed in a molar ratio of 25:1. The intake air volume of the raw material gas in the main furnace 4 of the CVD reduction furnace is determined according to the diameter of the silicon rod, and is gradually increased from 175m / h to 32300m / h, and the inlet temperature of the main furnace 4 of the CVD reduction furnace is gradually increased from 51°C to 313°C. It can meet the minimum supersaturation of cauliflower material that does not grow on silicon rods, so it will not cause the phenomenon of melting cores of silicon rods.

[0051] In the generated intermediate tail gas, the content of dichlorodihydrosilane is 6%, and the unreacted refined trichlorosilane accounts for ...

Embodiment 3

[0054] This embodiment is basically the same as Embodiments 1 and 2, except that the refined trichlorosilane stored in the first storage tank 1 is mixed with hydrogen gas in a molar ratio of 3.5:1 in the bubbling vaporizer 2 . The refined trichlorosilane and dichlorodihydrosilane stored in the second storage tank 5 are mixed in a molar ratio of 22:1. The intake air volume of the raw material gas of the main furnace 4 of the CVD reduction furnace is determined according to the diameter of the silicon rod, and gradually increases from 197m / h to 32587.5m / h, and the inlet temperature of the main furnace 4 of the CVD reduction furnace gradually increases from 53°C to 331°C. This can meet the minimum supersaturation of the cauliflower material that does not grow on silicon rods, so it will not cause the melting of silicon rod cores.

[0055] In the generated intermediate tail gas, the content of dichlorodihydrosilane is 7%, and the unreacted refined trichlorosilane accounts for abou...

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Abstract

The invention provides a polysilicon production technology. The polysilicon production technology comprises mixing refined trichlorosilane and hydrogen according to a ratio to obtain a raw material, orderly treating the raw material through a bubble vaporizer, an inlet and outlet gas heat exchanger and a CVD reduction main furnace, mixing refined trichlorosilane and dichlorosilane according to a ratio to obtain an accessory material, treating the accessory material through a chlorosilane vaporizer to obtain accessory material gas, through the CVD reduction main furnace, producing polysilicon from the raw material gas obtained by the bubble vaporizer, mixing the side product as intermediate tail gas and the accessory material gas through a static mixer, feeding the mixed gas into a CVD reduction accessory furnace, carrying out a reaction process on the intermediate tail gas and the accessory material gas on the surface of a silicon core in the CVD reduction accessory furnace to obtain polysilicon, carrying out heat exchange between the side product as finished tail gas and the raw material gas through the inlet and outlet gas heat exchanger, and feeding the mixed gas into a reduced tail gas recovery system. The polysilicon production technology improves a polysilicon generation rate and a deposition rate and reduces the material total amount of the finished tail gas.

Description

technical field [0001] The invention relates to a polysilicon production process. Background technique [0002] At present, the trichlorosilane method is generally used to produce polysilicon, that is, trichlorosilane and hydrogen are mixed in a certain ratio, and after heat exchange with the reduction tail gas, they enter the reduction furnace, and react on the surface of the silicon core in the furnace to form polysilicon, and the by-products are reduced. After the exhaust gas leaves the reduction furnace, it first exchanges heat with the feed mixture gas, and then enters the subsequent exhaust gas recovery system. Although this method of producing polysilicon can increase the yield, and the trichlorosilane, hydrogen, silicon tetrachloride, and dichlorodihydrosilane in the reduction tail gas can be recycled, the primary use efficiency of trichlorosilane is very low. The unreacted trichlorosilane in the reduction tail gas accounts for about 52-60% of the total trichlorosil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/03
Inventor 齐林喜赵亮
Owner 巴彦淖尔聚光硅业有限公司
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