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Magnetorheological chemical mechanical polishing solution used for SiC single crystal wafer and using method thereof

A chemical machinery, polishing liquid technology, applied in the direction of polishing compositions containing abrasives, etc., to achieve the effects of reducing production costs, shortening processing time, and convenient operation and use

Inactive Publication Date: 2017-01-04
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Magnetorheological chemical mechanical polishing solution used for SiC single crystal wafer and using method thereof
  • Magnetorheological chemical mechanical polishing solution used for SiC single crystal wafer and using method thereof
  • Magnetorheological chemical mechanical polishing solution used for SiC single crystal wafer and using method thereof

Examples

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Effect test

Embodiment 1

[0035] Taking the preparation of 500ml magnetorheological mechanical polishing fluid as an example, formula A polishing fluid and formula B polishing fluid were respectively prepared and mixed evenly before polishing.

[0036] The components of formula A polishing liquid are as follows:

[0037] Diamond powder with an average particle size of 0.5μm is used for abrasive particles, and the weight percentage is 6wt%; the magnetic particles are made of hydroxyl iron powder, the purity is ≥99.7%, the average particle size is 2.5μm, and the weight percentage is 20wt%; the dispersion stabilizer is polyacrylamide , the weight percentage is 1wt%; the balance is the base carrier liquid, and the base carrier liquid is selected from high-purity deionized water.

[0038] The composition of B formula polishing liquid is as follows:

[0039] Catalyst selects Fe3O4 (triiron tetroxide), average particle size is 0.5 μm, and percentage by weight is 3wt%; Oxidant selects hydrogen peroxide aqueou...

Embodiment 2

[0059] Still taking the preparation of 500ml magnetorheological mechanical polishing fluid as an example:

[0060] The components of formula A polishing liquid are as follows:

[0061] Diamond micropowder with an average particle size of about 1.0 μm is used for abrasive grains, with a weight percentage of 3wt%; magnetic particles are made of hydroxyl iron powder, with a purity of ≥99.7%, an average particle size of 5 μm, and a weight percentage of 10 wt%; the dispersion stabilizer is polypropylene glycol, with a weight percentage of 1wt%; the base carrier liquid is made of silicone oil,

[0062] The composition of B formula polishing liquid is as follows:

[0063] Catalyst selects zero valent iron (ZVI), average particle size is 200um, percentage by weight 3wt%; Oxidant selects hydrogen peroxide aqueous solution, concentration is 30%, percentage by weight 15wt%; Base carrier liquid selects silicone oil; pH value adjuster selects concentration to be 80 % concentrated hydroch...

Embodiment 3

[0068] Take the preparation of 500ml chemical mechanical polishing fluid as an example:

[0069] The components are as follows: diamond powder with an average particle size of about 0.5 μm, 6 wt% by weight; ferric iron tetroxide, 3 wt% by weight as the catalyst, and 3 wt% by weight; hydrogen peroxide aqueous solution, 30 wt% as the oxidant %, 10wt% by weight; the dispersion stabilizer is polyacrylamide stabilizer, 1wt% by weight; the base carrier liquid is high-purity deionized water, and the pH regulator is 80% concentrated hydrochloric acid, 0.5wt% by weight %.

[0070]The preparation process of the polishing liquid is as follows: (1) ultrasonically stir the weighed abrasive grains and base carrier liquid for 3-10 minutes, and mix evenly; (2) add a dispersion stabilizer, and then ultrasonically stir for 3-10 minutes, statically to obtain a mixture of abrasive grains. (3) pickling: get another beaker to measure 200mlpH regulator and weighed catalyst through ultrasonic stirr...

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Abstract

The invention provides a magnetorheological chemical mechanical polishing solution used for a SiC single crystal wafer and a using method thereof. A key formula of the magnetorheological chemical mechanical polishing solution is formed by a part A and a part B. The formula A comprises 3-10 wt% of abrasive particles, 5-30 wt% of magnetic particles, 1-10 wt% of dispersion stabilizer and base carrier liquid. The formula B comprises 1-30 wt% of oxidizing agent, 1-10 wt% of catalyst, 0.01-1 wt% of PH value modifier and base carrier liquid. By adoption of the magnetorheological chemical mechanical polishing solution, the formulas A and B can be used in a mixed mode or independently prior to processing according to different device and polishing requirements. The magnetorheological chemical mechanical polishing solution has the advantages that the surface roughness of the SiC single crystal wafer obtained after precision polishing processing, the material removal rate can reach 0.1-3.8 [mu]m / h, and the polishing finished surface is flat and smooth. A process for preparing the polishing solution is simple, and the magnetorheological chemical mechanical polishing solution is convenient to use and operate, low in cost and high in efficiency, can be used for processing the silicon surface and the carbon surface of the SiC single crystal wafer and have very high appcability and economic value.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic crystal material processing, and belongs to the ultra-smooth surface flattening and high-efficiency polishing process of hard and brittle materials in semiconductor lighting and optoelectronic processing, in particular to a magnetorheological mechanical polishing liquid for SiC single wafer and its Preparation and method of use. Background technique [0002] As a representative of the third generation of semiconductor materials - silicon carbide (SiC) has excellent characteristics such as large band gap, high breakdown electric field strength, high thermal conductivity, high saturated electron drift velocity, high bonding energy and high temperature stability. One of the most promising materials in the field of semiconductor materials. For SiC wafers, the surface is required to be ultra-smooth, free of defects, free of surface / subsurface damage and complete in surface lattice, and the surf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 肖晓兰阎秋生潘继生路家斌陈润梁华卓
Owner GUANGDONG UNIV OF TECH
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