Terahertz wave generator based on graphene

A wave generator and terahertz technology, applied in the field of terahertz radiation sources, can solve the problems of small gain, unable to effectively and stably achieve terahertz radiation, etc., achieve low power consumption, improve terahertz radiation power and antenna gain, and high market value effect

Pending Publication Date: 2017-01-04
郭玮
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Problems solved by technology

[0005] The invention provides a terahertz radiation source generator based on a graphene emission source and a coupled anti-fractal antenna, which can reduce power consumption and increase terahertz radiation power, and solve the problem of inability to effectively and stably realize terahertz radiation and relatively low gain in the prior art. small problem

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  • Terahertz wave generator based on graphene
  • Terahertz wave generator based on graphene
  • Terahertz wave generator based on graphene

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specific Embodiment

[0029] Specific embodiments: a terahertz generator based on graphene and coupled anti-fractal antennas.

[0030] The substrate is generated on the Si substrate, and the substrate material will have a certain influence on the properties of graphene. For example, graphene grows on SiO 2 on the substrate, since the SiO 2 The scattering of electrons by the optical phonons of the substrate is much stronger than that of graphene itself, resulting in a decrease in its electron mobility. The substrate in this embodiment is preferably HfO with a thickness of 200 nm produced by the ALD method. 2 , to enhance graphene electron mobility.

[0031] The graphene film was prepared by CVD method and transferred to the substrate to obtain a square (15×15 μm) graphene film with a thickness of 2 layers. After the terahertz antenna and the strip electrodes at both ends are integrally formed by photoetching, metal (Au with a thickness of 100 nm is selected in this embodiment) is deposited on the...

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Abstract

The invention discloses a terahertz wave generator based on graphene. The teraHertz wave generator comprises a substrate, a graphene film and a terahertz photoconductive antenna, wherein the graphene film is formed on the substrate and the terahertz photoconductive antenna is used for coupling Sierpinski fractal geometrical shape of the terahertz wave. According to the invention, bar-shaped electrodes are arranged at the two ends of inverse fractal antenna; a bias voltage is applied between the electrodes; the graphene film is pumped through femtosecond pulse laser; the electron motion in the graphene film is excited; the terahertz wave is irradiated under the effect of the bias voltage; the terahertz wave is coupled with the free space through the photoconductive antenna. Due to the high electronic mobility and the characteristic of easily generating terahertz wave of the graphene and the coupling function of the photoconductive antenna with similar characteristic, the emission efficiency of terahertz wave is increased, the antenna gain is increased, the power consumption and propagation loss of the antenna are reduced and the radiant power of the terahertz wave is increased.

Description

technical field [0001] The invention relates to the technical field of terahertz optoelectronic devices, specifically a self-similar antenna-coupled graphene-based terahertz radiation source, which generates radiation by pumping graphene with ultrashort laser pulses while applying a bias voltage Antifractal terahertz antennas are coupled into free space to achieve radiation. Background technique [0002] The frequency band of terahertz wave is between microwave and infrared. Because of its unique properties such as transient, low energy, penetrability, high bandwidth and safety without harmful biological ionization, it is widely used in biomolecular monitoring, national security, medical diagnosis, Microelectronics non-destructive testing, security inspection and other fields have broad application prospects. For a long time, due to the lack of low-energy, low-noise, stable and effective terahertz radiation and detection methods, this band with unique properties has not bee...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S1/02
CPCH01S1/02
Inventor 郭玮颜璐洁
Owner 郭玮
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