Heterojunction solar cell with core-shell structure based on chalcogencuprous compound and preparing method thereof
A technology of solar cells and chalcogen compounds, which is applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as hindering popularization, increasing the preparation cost and process complexity of nanowire solar cells, and achieves remarkable universality and simple preparation , good compatibility effect
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Embodiment 1
[0041] The heterojunction solar cell of this embodiment is based on a silicon-based substrate 1 covered with an insulating layer 2 on the upper surface, and a quasi-one-dimensional nanostructure 3 of a chalcogenide compound is dispersed on the insulating layer 2. A first metal thin film electrode 4 is deposited on one end of the quasi-one-dimensional nanostructure 3 to form an ohmic contact; a layer of photoresist barrier layer 5 is covered on the first metal thin film electrode 4 through ultraviolet exposure technology; through liquid phase cation replacement, the The quasi-one-dimensional nanostructure surface of the chalcogenide cuprous compound not covered by the photoresist barrier layer is replaced by the chalcogenide compound of indium 6, forming a core-shell with the chalcogenide cuprous compound as the core and the chalcogenide compound of indium as the shell Structural heterojunction: remove the photoresist barrier layer 5, and deposit the second metal thin film elect...
Embodiment 2
[0051] The preparation method of the core-shell structure heterojunction solar cell of this example is the same as that of Example 1, the only difference is that the chalcogenous cuprous compound used in this example is Cu 2 S nanowires, constructed Cu 2 S-In 2 S 3 Core-shell structure heterojunction solar cells.
[0052] The core-shell structure heterojunction solar cell prepared in this example has a light intensity of 30mW cm -2 , Under the irradiation of monochromatic light with a wavelength of 532nm, it presents remarkable photovoltaic characteristics, such as Figure 5 As shown, the open circuit voltage is 0.12V, the short circuit current is 1.29nA, the fill factor is 28.9%, and the conversion efficiency is about 2.0%.
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