A kind of heterojunction solar cell with core-shell structure based on chalcogenide cuprous compound and its preparation method
A technology of solar cells and chalcogenides, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of increasing the preparation cost and process complexity of nanowire solar cells, hindering promotion, etc., and achieves remarkable universality and simple preparation. , good compatibility
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Embodiment 1
[0041] The heterojunction solar cell of this embodiment is based on a silicon-based substrate 1 covered with an insulating layer 2 on the surface, and a chalcogenide cuprous compound quasi-one-dimensional nanostructure 3 is dispersed on the insulating layer 2. The first metal thin film electrode 4 is deposited on one end of the quasi-one-dimensional nanostructure 3 to form an ohmic contact; a photoresist barrier layer 5 is covered on the first metal thin film electrode 4 through ultraviolet exposure technology; The surface of the quasi-one-dimensional nanostructure of the chalcogenide compound that is not covered by the photoresist barrier layer is replaced with the chalcogenide compound of indium 6, forming a core-shell with the chalcogenide compound as the core and the chalcogenide compound of indium as the shell Structural heterojunction; the photoresist barrier layer 5 is removed, and the second metal film electrode 7 is deposited on the chalcogenide compound of indium by ul...
Embodiment 2
[0051] The preparation method of the core-shell structure heterojunction solar cell of this embodiment is the same as that of embodiment 1, except that the chalcogenide cuprous compound used in this embodiment is Cu 2 S nanowires, through the liquid phase cation replacement method, constructed Cu 2 S-In 2 S 3 Core-shell structure heterojunction solar cell.
[0052] The core-shell structure heterojunction solar cell prepared in this example has a light intensity of 30 mW cm -2 , Under the irradiation of monochromatic light with a wavelength of 532nm, it exhibits significant photovoltaic characteristics, such as Figure 5 As shown, the open circuit voltage is 0.12V, the short-circuit current is 1.29nA, the fill factor is 28.9%, and the conversion efficiency is about 2.0%.
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