Magnetic tunnel junction with quantum effect, and spin diode and spin transistor comprising magnetic tunnel junction

A magnetic tunnel junction and diode technology, which is applied in the field of magnetic tunnel junction, can solve the problems that quantum resonance tunneling effect is not obvious, hinder the practical application of spin transistor magneto-sensitive sensors and oscillators of spintronic devices, etc. Defective electronic states, improved performance, high breakdown voltage effects

Active Publication Date: 2017-01-11
INST OF PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] However, the quantum resonant tunneling effect of the double-barrier magnetic tunnel junction based on the MgO(001) barrier is not obvious experimentally, which also hinders the spintronic devices such as spin transistors and spin diodes based on this quantum effect. , magnetic sensors and oscillators, etc.

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  • Magnetic tunnel junction with quantum effect, and spin diode and spin transistor comprising magnetic tunnel junction
  • Magnetic tunnel junction with quantum effect, and spin diode and spin transistor comprising magnetic tunnel junction
  • Magnetic tunnel junction with quantum effect, and spin diode and spin transistor comprising magnetic tunnel junction

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Embodiment Construction

[0039] figure 1 showing a typical double-barrier magnetic tunnel junction 100 multilayer structure, Figure 2A with Figure 2B Schematically shows figure 1 The energy band diagram of the double barrier magnetic tunnel junction 100 is shown. It should be noted that in order to Figure 2A with Figure 2B The energy band diagram shown with figure 1 Corresponding to the multilayer structure shown, in order to facilitate the understanding of the shown energy band diagram, figure 1 The multiple layers included in the double barrier magnetic tunnel junction 100 are shown stacked laterally rather than one above the other.

[0040] refer to figure 1 , the double barrier magnetic tunnel junction 100 includes a first reference layer 102 , a first barrier layer 104 , a free layer 106 , a second barrier layer 108 and a second reference layer 110 . The first reference layer 102 , the free layer 106 and the second reference layer 110 may be formed of magnetic materials, such as ferro...

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Abstract

The invention relates to a magnetic tunnel junction with a quantum effect, and a spin diode and a spin transistor comprising the magnetic tunnel junction. The magnetic tunnel junction comprises a first reference layer, a first barrier layer, a free layer, and a second barrier layer, wherein the first reference layer is formed by a magnetic conductive material and has a fixed magnetizing direction; the first barrier layer is arranged on the first reference layer and formed by an insulating material; the free layer is arranged on the first barrier layer, and formed by a magnetic conductive material, and the magnetizing direction of the free layer can respond to an outer magnetic field to be freely changed; and the second barrier layer is arranged on the free layer and formed by an insulating material, wherein the insulating materials of the first barrier layer and the second barrier layer both comprise a spinel-like crystal structure.

Description

technical field [0001] The present invention generally relates to magnetic tunnel junctions, and more particularly, to a magnetic tunnel junction with significant quantum effects, and spintronic devices including said magnetic tunnel junction, such as spin transistors, spin diodes, magnetosensitive sensors and oscillators etc. Background technique [0002] Since the discovery of tunneling magnetoresistance (TMR) in Fe / Ge / Co multilayers in 1975 and giant magnetoresistance (GMR) in magnetic multilayers in 1988, physics and materials in spintronics Scientific research and applications have made great progress, especially the tunneling transport properties of spin-related electrons in magnetic tunnel junctions and the tunneling magnetoresistance effect have become one of the important research fields in condensed matter physics. In 1995, Miyazaki et al. and Moderola et al. discovered high room-temperature tunneling magnetoresistance effects in ferromagnetic metals / Al-O insulati...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/02H01L29/861
Inventor 温振超陶丙山袁忠辉姜丽仙韩秀峰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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