Memory device, manufacturing method thereof, and electronic equipment including the same

A technology for storage devices and storage gates, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as difficulty in stacking multiple vertical devices, increase in channel resistance, and difficulty in controlling gate length, etc. Achieve the effects of improving device performance, increasing storage density, and low leakage current

CN106340521BActive Publication Date: 2018-06-12INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2018-06-12

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Abstract

Disclosed are a storage device, a manufacturing method thereof, and electronic equipment including the storage device. According to an embodiment, a memory device may include a plurality of memory cell layers sequentially stacked on a substrate, each memory cell layer including a first array of first memory cells and a second array of second memory cells, the first array and The second arrays are nested within each other. The first and second memory cells in each memory cell layer are substantially substantially to each other along the stacking direction of the memory cell layers. Each first memory cell is a vertical device based on sequentially stacked first source / drain layers, channel layers and second source / drain layers. Each second memory cell is a vertical device based on an active semiconductor layer extending in the stacking direction. Each of the first memory cells and each of the second memory cells includes respective memory gate stacks, and they share a gate conductor layer. The gate conductor layers in the same memory cell layer are integrated.
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Description

technical field

[0001] The present disclosure relates to the field of semiconductors, and in particular, to a storage device based on a vertical type device, a manufacturing method thereof, and an electronic device including the storage device. Background technique

[0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot be easily further scaled down. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, vertical devices are easier to scale down than horizontal devices.

[0003] However, for vertical wickers, it is difficult to control the gate length, especially for single crystal channel materials. On the other hand, if a polycrystalline channel mat...

Examples

Embodiment Construction

[0014] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0015] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, ...