Memory device, manufacturing method thereof, and electronic equipment including the same

Abstract

Disclosed are a storage device, a manufacturing method thereof, and electronic equipment including the storage device. According to an embodiment, a memory device may include a plurality of memory cell layers sequentially stacked on a substrate, each memory cell layer including a first array of first memory cells and a second array of second memory cells, the first array and The second arrays are nested within each other. The first and second memory cells in each memory cell layer are substantially substantially to each other along the stacking direction of the memory cell layers. Each first memory cell is a vertical device based on sequentially stacked first source / drain layers, channel layers and second source / drain layers. Each second memory cell is a vertical device based on an active semiconductor layer extending in the stacking direction. Each of the first memory cells and each of the second memory cells includes respective memory gate stacks, and they share a gate conductor layer. The gate conductor layers in the same memory cell layer are integrated.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a storage device based on a vertical type device, a manufacturing method thereof, and an electronic device including the storage device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot be easily further scaled down. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, vertical devices are easier to scale down than horizontal devices. [0003] However, for vertical wickers, it is difficult to control the gate length, especially for single crystal channel materials. On the other hand, if a polycrystalline channel mat...

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Problems solved by technology

[0003] However, for vertical wickers, it is difficult to control the gate length, especially for single crystal channel materials

On the other hand, if a polycrystalline channel material is used, the channel resistance is greatly increased compared to single crystal material, making it difficult to stack multiple vertical devices, as this would result in an excessively high resistance

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