Preparation method and application of black phosphorus quantum dots with high yield

A quantum dot, high-yield technology, applied in the field of nano-material preparation, can solve the problems of low yield, limited application, time-consuming and energy-consuming, etc., and achieve high-yield preparation and wide applicability

Inactive Publication Date: 2017-02-01
FUZHOU UNIV
View PDF2 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still a lack of stable and reliable methods to prepare black phosphorus quantum dots with smaller sizes, which limits their wider application
At present, there are reports on ultrasonic peeling method (see literature Zhang X, Prof. Haiming Xie, Zhengdong Liu, et al . Black Phosphorus Quantum Dots [J].Angewandte Chemie, 2015, 127(12):3724–37

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and application of black phosphorus quantum dots with high yield
  • Preparation method and application of black phosphorus quantum dots with high yield
  • Preparation method and application of black phosphorus quantum dots with high yield

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0021] (1) Weigh 30 mg of black phosphorus crystals in an anhydrous and oxygen-free glove box (water and oxygen <0.1 ppm), grind for 30 min, disperse into 35 ml of N-methylpyrrolidone solvent, seal and take out.

[0022] (2) Using the liquid phase exfoliation method, put the above dispersion into a probe-type ultrasonic instrument (600W) for ultrasonic dispersion for 2 hours, and the entire ultrasonic process is completed under ice bath conditions. Stand still for 2 hours after the completion of ultrasound, take the upper liquid and centrifuge (2000rpm, 30min).

[0023] (3) Take the supernatant and transfer it to a 50ml reaction kettle, put it in a high-temperature furnace, and carry out solvothermal reaction (140°C, 8h). That is, black phosphorus quantum dots with uniform size and diameter of several nanometers are obtained.

[0024] The product obtained in Example 1 is characterized, and the results are shown in Figures 1 to 3. in, figure 1 Digital photograph of the prep...

example 2

[0026] (1) Weigh 10 mg of black phosphorus crystals in an anhydrous and oxygen-free glove box (water and oxygen < 0.1 ppm), grind for 40 min, disperse into 20 ml of N-methylpyrrolidone solvent, seal and take out.

[0027] (2) Using the liquid phase exfoliation method, put the above dispersion into a probe-type ultrasonic instrument (650W) for ultrasonic dispersion for 1 hour, and the entire ultrasonic process was completed under ice bath conditions. Stand still for 1 hour after the completion of ultrasound, take the upper liquid and centrifuge (1500rpm, 20min).

[0028] (3) Take the supernatant and transfer it to a 50ml reaction kettle, put it into a high-temperature furnace, and carry out solvothermal reaction (120°C, 6h). That is, black phosphorus quantum dots with uniform size and diameter of several nanometers are obtained.

example 3

[0030] (1) Weigh 50 mg of black phosphorus crystals in an anhydrous and oxygen-free glove box (water and oxygen <0.1 ppm), grind for 60 min, disperse into 100 ml of N-methylpyrrolidone solvent, seal and take out.

[0031] (2) Using the liquid phase exfoliation method, put the above dispersion liquid into a high-probe ultrasonic instrument (900W) for ultrasonic dispersion for 3 hours, and the entire ultrasonic process is completed under ice bath conditions. Stand still for 2 hours after the completion of ultrasound, take the upper liquid and centrifuge (1800rpm, 40min).

[0032] (3) Take the supernatant and transfer it to a 50ml reaction kettle, put it in a high-temperature furnace, and carry out solvothermal reaction (130°C, 10h). That is, black phosphorus quantum dots with uniform size and diameter of several nanometers are obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method and application of black phosphorus quantum dots with high yield. The preparation method comprises the following steps: firstly performing ultrasonic treatment on a massive black phosphorus crystal for 1-3 hours by adopting a liquid phase stripping method; after the completion of ultrasonic treatment, standing for 1-2 hours and then taking upper liquid for centrifugal separation, wherein the rotating speed is 1500-2000 rpm, and the time is 20-40 minutes; dispersing in a N-methyl pyrrolidone solvent, then standing, performing centrifugal separation, taking liquid supernatant and pouring into a teflon-lined high-pressure reactor for solvothermal reaction; after the end of reaction, obtaining black phosphorus quantum dot dispersion liquid with uniform size. A material prepared by the preparation method disclosed by the invention has potential application to the fields of optoelectronics, electronic sensors, semiconductors and the like.

Description

technical field [0001] The invention relates to a method for preparing black phosphorus quantum dots and an application thereof. The method uses an intercalation reaction of organic solvent molecules on black phosphorus crystals to form a quantum dot dispersion liquid, and belongs to the technical field of nanomaterial preparation. Background technique [0002] Black phosphorus is a layered structure crystal similar to graphite, and the layers are combined by van der Waals force. Different from graphite, the phosphorus atoms in the same layer of black phosphorus are not in the same plane, arranged in wrinkled layers along the b-axis, and is a direct band gap semiconductor material. It has many excellent properties, such as high carrier mobility (200-1000 cm 2 V ~1 S ~1 ), obvious anisotropy, and bandgap width (0.3-2 eV) that can be adjusted by the number of layers, it is considered to be the most potential two-dimensional material for applications in the fields of optics...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B25/02B82Y30/00
CPCC01B25/02C01P2002/01C01P2004/04C01P2004/64
Inventor 詹红兵李梦培张艳
Owner FUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products