Manufacturing method of ohmic contact electrode based on AlGaN/GaN HEMT
A technology of ohmic contact electrodes and electrodes, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as low reliability, inability to form good ohmic contacts, high heat, etc.
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Embodiment 1
[0039] figure 1 It is a flow chart of Embodiment 1 of the manufacturing method of the ohmic contact electrode based on AlGaN / GaN HEMT of the present invention, as figure 1 As shown, the manufacturing method of the AlGaN / GaN HEMT-based ohmic contact electrode provided in this embodiment includes:
[0040] Step 101 , depositing a silicon nitride passivation layer 4 and a tetraethoxysilane oxide layer 5 sequentially on the AlGaN barrier layer 3 .
[0041] In this example, figure 2 It is a schematic diagram of the structure after sequentially depositing a silicon nitride passivation layer and a tetraethoxysilane oxide layer on the AlGaN barrier layer in the method for manufacturing an ohmic contact electrode based on AlGaN / GaN HEMT provided by Embodiment 1 of the present invention, Such as figure 2 As shown, a silicon nitride passivation layer (abbreviation: SiN passivation layer) 4 and a tetraethoxysilane oxide layer (abbreviation: TEOS oxidation layer) are sequentially depo...
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