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A preparation method of sn/cu/sn cold-pressed prefabricated sheet for high-temperature packaging

A pre-formed and cold-pressed technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, lamination, etc., can solve problems such as damage to the efficiency of semiconductor chip interconnection and packaging, and achieve convenient storage and transportation, simple processing technology, The effect of improved interconnect efficiency

Active Publication Date: 2018-11-30
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, under general soldering conditions (heating at 250°C for 1min), Cu 6 sn 5 The growth rate of Cu is only 2~3μm / min, while Cu 3 The growth rate of Sn is only 100-200nm / min; this means that if you want to realize the intermetallic compound-based vertical interconnect solder joints with conventional package sizes (such as: interconnection pitch 20μm), you need to conduct long-term lead-free Sn-based solder joints. Continuous heating over time, which undoubtedly damages the interconnection packaging efficiency of semiconductor chips

Method used

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  • A preparation method of sn/cu/sn cold-pressed prefabricated sheet for high-temperature packaging
  • A preparation method of sn/cu/sn cold-pressed prefabricated sheet for high-temperature packaging
  • A preparation method of sn/cu/sn cold-pressed prefabricated sheet for high-temperature packaging

Examples

Experimental program
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Effect test

Embodiment 1

[0069] A 100 μm thick Sn foil was pressed to a thickness of 10 μm by pre-pressing 8 times; a 500 μm thick Cu foil was pressed to a thickness of 60 μm by pre-pressing 10 times. Use acetone solution, 1% hydrochloric acid alcohol solution, 1% nitric acid alcohol solution and alcohol to carry out surface treatment on Cu and Sn pre-pressed foils. Set the vacuum pressure to 0.1Pa, the temperature to 150°C, and temper the pre-pressed foil for 1h. Stack the tempered Cu and Sn pre-pressed foils into the double-roller cold press according to the Sn / Cu / Sn structure, control the gap between the No. 1 rollers to 79 μm, the No. 2 roller gap to 40 μm, and the speed to 4mm / s, repeat Rolling is performed three times, and finally the thickness of the rolled Sn / Cu / Sn cold-pressed metal foil is 3 μm / 34 μm / 3 μm.

Embodiment 2

[0071] A 500 μm thick Sn foil was pressed to a thickness of 30 μm by pre-pressing 9 times, and a 500 μm thick Cu foil was pressed to a thickness of 60 μm by pre-pressing 10 times. Use acetone solution, 1% hydrochloric acid alcohol solution, 1% nitric acid alcohol solution and alcohol to carry out surface treatment on Cu and Sn pre-pressed foils. Set the vacuum pressure to 0.1Pa, the temperature to 150°C, and temper the pre-pressed foil for 1 hour. The tempered Cu and Sn pre-pressed foils are stacked into the double-roller cold press according to the Sn / Cu / Sn structure, and the gap between the No. 1 roller and the No. 2 roller is 60 μm. Press 3 times; then control the gap between the double sticks to 50 μm and keep the speed at 2 mm / s, and roll 3 times. The finally obtained rolled Sn / Cu / Sn cold-pressed metal foil has a thickness of 10 μm / 30 μm / 10 μm.

Embodiment 3

[0073] A 500 μm thick Sn foil was pressed to a thickness of 20 μm by pre-pressing 10 times; a 500 μm thick Cu foil was pressed to a thickness of 60 μm by pre-pressing 10 times. Use acetone solution, 1% hydrochloric acid alcohol solution, 1% nitric acid alcohol solution and alcohol to carry out surface treatment on Cu and Sn pre-pressed foils. Set the vacuum pressure to 0.1Pa, the temperature to 150°C, and temper the pre-pressed foil for 1 hour. The tempered Cu and Sn pre-pressed foils are stacked into the double-roller cold press according to the Sn / Cu / Sn structure, and the gap between the No. 1 roller and the No. 2 roller is 50 μm. Press 3 times; then control the gap between the double sticks to 46 μm and keep the speed at 2 mm / s, and roll 3 times; control the gap between the double sticks to 42 μm and keep the speed at 2 mm / s, and roll 3 times. Finally, the thickness of the rolled Sn / Cu / Sn cold-pressed metal foil is 6 μm / 30 μm / 6 μm.

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Abstract

The invention discloses a preparation method of a Sn / Cu / Sn cold-pressed prefabricated sheet for high-temperature packaging and relates to packaging and interconnection of semiconductor devices. The preparation method comprises the following steps of 1) preparing an Sn / Cu / Sn cold-pressed metal foil; 2) processing the Sn / Cu / Sn cold-pressed prefabricated sheet; and 3) metallurgically interconnecting the Sn / Cu / Sn cold-pressed prefabricated sheet and a Cu-based bonding pad. The raw material price is low, the processing technology is simple, the equipment requirement is low, the Sn / Cu / Sn cold-pressed prefabricated sheet is conveniently stored, transported and manufactured in batches, and the material processability is good. A high-temperature-resistant lead-free welding spot can be formed at low temperature within short time, and adverse effects for the reliability of a chip and energy waste in a high-temperature and long-term backflow process are completely avoided. The interconnection principle is simple, the alignment precision is high, and few interconnection defects exist; and the technical bottleneck that it is difficult to rapidly manufacture large-interconnection-clearance lead-free high-temperature-resistant welding spots in high-temperature semiconductor devices can be solved.

Description

technical field [0001] The invention relates to packaging and interconnection of semiconductor devices, in particular to a method for preparing a Sn / Cu / Sn cold-pressed prefabricated sheet for high-temperature packaging. Background technique [0002] The progress of the semiconductor industry promotes the continuous development of microelectronic devices in the direction of miniaturization, integration and multi-function. The smaller volume and more functions make the power density of the device significantly increased, which in turn increases the heat generation of the device; the greater integration density greatly compresses the heat dissipation space of the device, which eventually leads to a sharp rise in the operating temperature of the device (Daniel Lu , C.P. Wong. Materials for Advanced Packaging. Springer; 2009.p.1-62). Especially for those semiconductor devices that are used in high-temperature environments such as aerospace, high-speed trains, oil exploration, co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23P15/00B23K26/38C21D9/00C23G5/032C23G1/10H01L21/48B32B15/01B32B15/04B32B15/20B32B37/10B21D28/34
CPCB21D28/34B23K26/38B23P15/00B32B15/01B32B15/04B32B15/20B32B37/10C21D9/0068C23G1/10C23G1/103C23G5/032H01L21/4842H01L24/11H01L24/13H01L24/16H01L24/81H01L2224/0401H01L2224/05647H01L2224/1111H01L2224/11334H01L2224/13083H01L2224/13111H01L2224/13147H01L2224/16503H01L2224/16507H01L2224/8182
Inventor 张志昊李明雨操慧珺杨海峰
Owner XIAMEN UNIV