Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Self-doped conjugated phenolamine hole-transporting material and its preparation method and use

A technology of hole transport material and conjugated phenolic amine, which is applied in the field of self-doping conjugated phenolic amine hole transport material and its preparation and application, can solve the problems of cost increase and achieve the goal of preventing interface erosion and high conductivity Effect

Active Publication Date: 2017-02-15
SOUTH CHINA UNIV OF TECH
View PDF2 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the complex doping process also greatly increases the cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Self-doped conjugated phenolamine hole-transporting material and its preparation method and use
  • Self-doped conjugated phenolamine hole-transporting material and its preparation method and use
  • Self-doped conjugated phenolamine hole-transporting material and its preparation method and use

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] 4,7-dibromo-benzothiadiazole (0.59g, 2.00mmol), 4,4-dimethoxydiphenyl-4-boronic acid-aniline (1.75g, 5.00mmol), tetrakistriphenylphosphine Palladium (230mg, 0.2mmol) was added to a mixed solvent of anhydrous toluene (20mL) and ethanol (10mL), and 5mL of 2M sodium carbonate aqueous solution was added under the protection of nitrogen, and the reaction was refluxed for 8h. The reaction product was separated and purified to obtain intermediate Product 1.45g, yield 98%. Dissolve the above product (0.5 g) in 15 ml of dichloromethane solution, exhaust nitrogen gas for 20 min, add 6 mL of boron tribromide at -78 ° C, gradually raise to room temperature, and react for 72 h, add an appropriate amount of ice water to quench the excess boron tribromide, extract the product three times with 30mL ethyl acetate, collect the organic phase, remove the solvent under reduced pressure, separate with a silica gel column, and use petroleum ether / ethyl acetate=1:1 (v / v) as eluent , and then ...

Embodiment 2

[0049] Dissolve Spiro-OMeTAD (0.3g) in 10ml of dichloromethane solution, exhaust nitrogen for 20min, add 3mL of boron tribromide at -78°C, gradually raise to room temperature, and react for 48h, then add appropriate amount of methanol to quench excess boron tribromide, extract the product three times with 30mL ethyl acetate, collect the organic phase, remove the solvent under reduced pressure, and separate with a silica gel column, using petroleum ether / ethyl acetate=1:3 (v / v) as eluent , the crude product was obtained, and then washed 3 times with petroleum ether to obtain 0.25 g of gray-green powder, with a yield of 80%. 1 H-NMR (600MHz, DMSO-d 6 )δ9.40-9.18(s,8H),7.48-7.32(d,J=12Hz,4H),6.83-6.70(m,16H),6.68-6.61(m,16H),6.61-6.57(dd,J =1.8,6Hz,4H),6.20-6.06(s,4H).C 73 h 52 N 4 NaO 4 [M + Na + ] + 1135.3677, found 1135.3669. The structural formula of the product obtained is as follows:

[0050]

[0051] The resulting product has a solubility greater than 200mg / mL i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of organic optoelectronic materials and discloses a self-doped conjugated phenolamine hole-transporting material and its preparation method and use. The self-doped conjugated phenolamine hole-transporting material has a general structural formula (1) or (2), wherein X and R represent conjugated aromatic rings or conjugated heterocyclic bridging groups. The conjugated phenolamine derivative can be dissolved in large polarity solvents such as dimethylsulfoxide and alcohol and has good film-forming properties. In a multilayer device, interface erosion caused by a low polarity solvent such as toluene or chlorobenzene is prevented. The self-doped conjugated phenolamine hole-transporting material has a stable free radical signal, utilizes the mechanism of conjugated phenolamine-induced self-doping, has good hole-transporting properties in the absence of additional dopants and can be used in the field of organic optoelectronic devices.

Description

technical field [0001] The invention belongs to the technical field of organic photoelectric materials, and specifically relates to a self-doping conjugated phenolic amine hole transport material and its preparation and application. Background technique [0002] In multilayer organic electronic device structures, in order to overcome the hole-charge transport barrier, a hole-transport material (HTM) layer is usually introduced, which functions to transport holes and block electrons, thereby improving the efficiency of the device. [0003] Doped poly(3,4-ethylenedioxythiophene / polystyrene sulfonate (PEDOT:PSS) has high electrical conductivity and convenient solution processing characteristics, and is widely used as a hole in organic electronic devices. Inject / transfer material. However, the corrosion of metal electrodes by PEDOT:PSS due to the use of dopants was confirmed to reduce the device lifetime. [0004] Dopants are an effective way to increase the conductivity of ma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07D285/14C07C213/00C07C215/82
CPCC07C213/00C07D285/14H10K85/633H10K85/656C07C215/82Y02E10/549
Inventor 李远邱学青薛雨源
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com