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Pb<2+>-doped ultraviolet long-afterglow luminescent material and preparation method thereof

A technology of luminescent materials and foreign ministers, applied in luminescent materials, chemical instruments and methods, etc., to achieve the effects of enhanced ultraviolet afterglow intensity, simple operation, and excellent light-excited afterglow luminescence performance

Inactive Publication Date: 2017-02-15
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There have been many studies on Pb 2+ Doped UV-emitting materials are reported, but Pb 2+ Long afterglow materials as luminescent centers, especially UV long afterglow materials, have not been reported yet

Method used

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  • Pb&lt;2+&gt;-doped ultraviolet long-afterglow luminescent material and preparation method thereof
  • Pb&lt;2+&gt;-doped ultraviolet long-afterglow luminescent material and preparation method thereof
  • Pb&lt;2+&gt;-doped ultraviolet long-afterglow luminescent material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0032] According to the following ingredients: UV long afterglow luminescent material Sr 2 MgGe 2 o 7 :Pb 2+ , with Sr 2 MgGe 2 o 7 as the matrix, doped with Pb 2+ is the active ion, where Pb 2+ The doping amount (accounting for the luminescent material) is 0.5 mol%. Accurately weigh strontium carbonate (SrCO 3 ) 1.7716g, magnesium oxide (MgO) 0.24g, germanium oxide (GeO 2 ) 1.26g, lead oxide (PbO) 0.0067g and boron oxide (B 2 o 3 ) 0.0165g. Put the above raw materials in an agate mortar and grind for about 1 hour, mix the raw materials thoroughly, then transfer them to a corundum crucible, and pre-fire them at 900°C for 2 hours. After the calcined powder is reground, use a powder tablet press to press about 1 g of the powder into a disc with a diameter of about 15 mm and a thickness of about 1 mm. Finally, the formed wafer was sintered at 1320°C for 3 hours to obtain Sr 2 MgGe 2 o 7 :Pb 2+ UV long afterglow luminescent material.

[0033] The sample prepared ...

Embodiment 2

[0039] According to the following ingredients: UV long afterglow luminescent material Sr 2 MgGe 2 o 7 :Pb 2+ , with Sr 2 MgGe 2 o 7 as the matrix, doped with Pb 2+ is the active ion, where Pb 2+ The doping amount (accounting for the luminescent material) is 1mol%; accurately weigh strontium carbonate (SrCO 3 ) 1.7672g, magnesium oxide (MgO) 0.24g, germanium oxide (GeO 2 ) 1.26g, lead oxide (PbO) 0.0134g and boron oxide (B 2 o 3 ) 0.0165g. Put the above raw materials in an agate mortar and grind for about 1 hour, mix the raw materials thoroughly, then transfer them to a corundum crucible, and pre-fire them at 800°C for 2 hours. After the pre-fired powder is reground, about 1 g of the powder sample is pressed into a disc with a diameter of about 15 mm and a thickness of about 1 mm using a powder tablet press. Finally, the formed wafer was sintered at 1350°C for 2 hours to obtain Sr 2 MgGe 2 o 7 :Pb 2+ UV long afterglow luminescent material.

Embodiment 3

[0041] According to the following ingredients: UV long afterglow luminescent material Sr 2 MgGe 2 o 7 :Pb 2+ , with Sr 2 MgGe 2 o 7 as the matrix, doped with Pb 2+ is the active ion, where Pb 2+ The doping amount (accounting for the luminescent material) is 0.1mol%; accurately weigh strontium carbonate (SrCO 3 ) 1.7751g, magnesium oxide (MgO) 0.24g, germanium oxide (GeO 2 ) 1.26g, lead oxide (PbO) 0.0014g and boron oxide (B 2 o 3 ) 0.0165g. Grind the above raw materials in an agate mortar for about 1 hour, mix the raw materials thoroughly, then transfer to a corundum crucible, and pre-fire at 800°C for 3 hours. After the pre-fired powder is reground, about 1 g of the powder sample is pressed into a disc with a diameter of about 15 mm and a thickness of about 1 mm using a powder tablet press. Finally, the formed wafer was sintered at 1300°C for 3 hours to obtain Sr 2 MgGe 2 o 7 :Pb 2+ UV long afterglow luminescent material.

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Abstract

The invention discloses a Pb<2+>-doped ultraviolet long-afterglow luminescent material and a preparation method thereof. The luminescent material uses Sr2MgGe2O7 as a matrix and doping Pb<2+> ions as activation ions, wherein the Pb<2+> ions account for 0.05 to 2 mol% of the luminescent material. The preparation method comprises the following steps: mixing raw materials with a fluxing agent; carrying out low-temperature pre-burning at first; and then carrying out high-temperature sintering so as to obtain the ultraviolet long-afterglow luminescent material. The luminescent material prepared in the invention presents strong single-band ultraviolet long-afterglow luminescence performance. The peak of ultraviolet long-afterglow luminescence located at the position of 370 nm and afterglow time is as long as 12 h. Meanwhile, the material presents excellent photoexcitation luminescence performance. A sample having undergone high-energy ultraviolet pre-irradiation has obviously improved ultraviolet afterglow intensity after excitation by low-energy light (white light or near infrared light). The ultraviolet long-afterglow luminescent material has potential application value in fields like photochemical catalysis, disinfection and sterilization, counterfeiting prevention and medical photodynamic therapy.

Description

technical field [0001] The invention belongs to the technical field of long afterglow luminescent materials, in particular to a Pb 2+ Doped ultraviolet long-lasting luminescent material and its preparation method. Background technique [0002] Ultraviolet luminescent materials with a luminescence band between 200 and 400nm have attracted widespread attention in recent years due to their great application value in the fields of photochemical catalysis, disinfection and sterilization, anti-counterfeiting, and medical photodynamic therapy. Because of this, the development of new ultraviolet luminescent materials has always been a research hotspot in the field of luminescent materials. The current research mainly focuses on rare earth ion-doped ultraviolet luminescent materials and semiconductor materials. However, for some special applications of luminescent materials, such as photocatalysis, photodynamic therapy, etc., if the ultraviolet luminescent material can continue to e...

Claims

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Application Information

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IPC IPC(8): C09K11/66
CPCC09K11/66
Inventor 孙康宁梁延杰
Owner SHANDONG UNIV
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