Preparation method for insulating and heat-conducting film and packaging structure
A technology of insulation, heat conduction, and packaging structure, which is applied in the direction of semiconductor devices, semiconductor/solid-state device parts, ion implantation plating, etc., can solve problems such as low bonding force, easy peeling, and failure to meet the requirements of use, and achieves a wide range of industrial prospects. , high insulation effect
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Embodiment 1
[0044] The invention provides a method for preparing an insulating and heat-conducting film, please refer to figure 1 , is shown as a process flow chart of the method, comprising the steps:
[0045] S1: providing a substrate, forming a metal element layer on the substrate; the metal element is aluminum or titanium;
[0046] S2: forming a silicon-doped compound layer of the corresponding metal on the simple metal layer;
[0047] S3: forming a diamond-like insulating and heat-conducting thin film on the silicon-doped compound layer.
[0048] Among them, the diamond-like carbon (DLC) insulating heat-conducting film has the characteristics of high hardness, wear resistance, thermal conductivity, insulation, strong chemical inertness and good biocompatibility. between sp 3 and sp 2 The form of the bond is combined to form a metastable amorphous carbon of amorphous carbon. The film resistivity can reach 108Ω.cm, the hardness is higher than 10GPa, and the thermal conductivity can...
Embodiment 2
[0077] The present invention also provides a packaging structure, please refer to Figure 5 , showing a schematic diagram of the packaging structure, including a substrate 1 and a chip 5 bonded to the upper surface of the substrate 1, the lower surface of the substrate 1 is sequentially formed with a metal element layer 2, a silicon-doped compound layer 3 of the corresponding metal, and a diamond-like carbon Insulation and heat conduction film 4; the metal element is aluminum or titanium.
[0078] It should be noted that the so-called "silicon-doped compound layer of the corresponding metal" means: if the metal element layer 2 is an aluminum layer, then the silicon-doped compound layer of the corresponding metal is an aluminum-doped silicon compound layer; Layer 2 is a titanium layer, and the silicon-doped compound layer of the corresponding metal is a titanium-doped silicon compound layer.
[0079] Specifically, the material of the substrate 1 includes but not limited to any...
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