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Preparation method for dispersively distributed self-healing phase B12(C,Si,B)3 modified SiC/SiC compound material

A composite material and dispersion distribution technology, which is applied in the field of preparation of dispersion distribution self-healing phase B123 modified SiC/SiC composite materials, can solve problems such as fracture toughness, and achieve the advantages of promoting crack deflection, reducing damage and short holding time. Effect

Inactive Publication Date: 2017-02-22
NORTHWESTERN POLYTECHNICAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to overcome the shortcomings of poor fracture toughness caused by continuous distribution when the existing method introduces dense self-healing modified phase, the present invention provides a self-healing phase B with dispersed distribution 12 (C,Si,B) 3 Preparation method of modified SiC / SiC composite material

Method used

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  • Preparation method for dispersively distributed self-healing phase B12(C,Si,B)3 modified SiC/SiC compound material
  • Preparation method for dispersively distributed self-healing phase B12(C,Si,B)3 modified SiC/SiC compound material
  • Preparation method for dispersively distributed self-healing phase B12(C,Si,B)3 modified SiC/SiC compound material

Examples

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Effect test

Embodiment 1

[0027] Example 1: The selected 2D porous Tyranno ZMI SiC fiber preform was ultrasonically cleaned and dried; then the BN interface and SiC matrix were sequentially deposited in the fiber preform by the CVI method to make a 2D porous Tyranno ZMI SiC / SiC composite material prefabrication body. Among them, BN deposition temperature: 600°C, holding time: 32h, SiC deposition temperature: 950°C, holding time: 240h; the density of the obtained porous SiC / SiC composite preform is 1.8g / cm 3 , The open porosity is 19vol.%. Add 1.5g of polyethyleneimine dispersant to 300g of absolute ethanol, stir magnetically until the dispersant dissolves, then add 75g of phenolic resin, 7.5g of hexamethylenetetramine, and 135g of B with a particle size of 1.5μm 4 C powder; stir evenly with a magnetic force and pour into an agate ball mill jar, add agate balls, and wet ball mill on a planetary ball mill for 10 hours to make a precursor slurry impregnation solution. Pour the prepared precursor slurry ...

Embodiment 2

[0030] Example 2: The selected 2D porous Amosic SiC fiber preform is ultrasonically cleaned and dried; then the BN interface and SiC matrix are sequentially deposited in the fiber preform by the CVI method to make a 2D porous Tyranno ZMI SiC / SiC composite material preform . Among them, BN deposition temperature: 650°C, holding time: 20h, SiC deposition temperature: 1050°C, holding time: 160h; the density of the obtained porous SiC / SiC composite preform is 2.0g / cm 3 , The open porosity is 20vol.%. Add 2g of polyethyleneimine dispersant to 300g of absolute ethanol, stir magnetically until the dispersant dissolves, then add 90g of phenolic resin, 9g of hexamethylenetetramine, and 150g of B with a particle size of 1.5μm 4 C powder; stir evenly with a magnetic force and pour into an agate ball mill tank, add agate balls, and wet ball mill on a planetary ball mill for 11 hours to prepare a precursor slurry impregnation solution. Pour the prepared precursor slurry impregnation solu...

Embodiment 3

[0032] Example 3: The selected 2.5D porous Tyranno ZMI SiC fiber preform was ultrasonically cleaned and dried; then the BN interface and SiC matrix were sequentially deposited in the fiber preform by chemical vapor deposition to make 2D porous Tyranno ZMI SiC / SiC composite material preform. Among them, BN deposition temperature: 630°C, holding time: 25h, SiC deposition temperature: 1000°C, holding time: 200h; the density of the obtained porous SiC / SiC composite preform is 1.7g / cm 3 , The open porosity is 30vol.%. Add 4g of polyethyleneimine dispersant to 400g of absolute ethanol, stir magnetically until the dispersant is dissolved, then add 140g of phenolic resin, 14g of hexamethylenetetramine, and 200g of B with a particle size of 2μm. 4 C powder; stir evenly with a magnetic force and pour into an agate ball mill tank, add agate balls, and wet ball mill on a planetary ball mill for 12 hours to make a precursor slurry impregnation solution. Pour the prepared precursor slurr...

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Abstract

The invention discloses a preparation method for a dispersively distributed self-healing phase B12(C,Si,B)3 modified SiC / SiC compound material. The preparation method is adopted for solving the technical problem of poor fracture toughness caused by continuous distribution in the process of introducing a compact self-healing modifying phase according to a present method. According to the technical scheme, the method comprises the following steps: introducing phenolic resin mixed with B4C powder into a porous SiC / SiC compound material by adopting vacuum-pressure dipping; curing, splitting and thermally treating; and performing short-term liquid silicon permeation under a vacuum condition. Fused Si reacts with split C and B4C, thereby generating a ternary phase B12(C,Si,B)3 and SiC which are dispersively distributed in the unreacted Si. According to the invention, a CVI-SiC substrate is capable of effectively protecting SiC fiber and BN interface in the liquid silicon permeation process, the damage to SiC fiber is reduced as far as possible, and the fracture toughness of the compound material is increased to 15-26MPa*ml / 2 from 8MPa*ml / 2 of the background art.

Description

technical field [0001] The invention relates to a preparation method of SiC / SiC composite material, in particular to a self-healing phase B with dispersed distribution 12 (C,Si,B) 3 A method for preparing a modified SiC / SiC composite material. Background technique [0002] SiC / SiC composite materials have broad application prospects in high thrust-to-weight ratio aeroengines and nuclear fusion reactors due to their low density, high specific strength, high specific modulus, oxidation resistance, and low neutron activity. The traditional chemical vapor deposition method (hereinafter referred to as CVI) to prepare SiC / SiC has high porosity and long preparation cycle. These pores and microcracks caused by thermal mismatch will become diffusion channels for oxidizing media, affecting the environmental performance of SiC / SiC, and its long-term oxidation resistance is not ideal. For this reason, on the one hand, rapid densification methods such as melt infiltration are used to ...

Claims

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Application Information

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IPC IPC(8): C04B35/84C04B35/80C04B35/65
CPCC04B35/65C04B2235/3821C04B2235/428C04B2235/48C04B2235/77C04B2235/96C04B2235/9607
Inventor 殷小玮马晓康曹晓雨孙鑫楠成来飞张立同
Owner NORTHWESTERN POLYTECHNICAL UNIV
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