Method for preparing low-absorptivity high-hemispherical-emissivity oxidation film on surface of aluminum through electro-deposition
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- FOSHAN UNIVERSITY
- Publication Date
- 2017-02-22
Abstract
Description
technical field
[0001] The invention relates to a method for preparing an oxide film with low absorptivity and high hemispherical emissivity by electrodeposition on the surface of aluminum, in particular to a pulse ultrasonic electrodeposition preparation method for preparing a low-ratio solar absorptivity / hemispherical emissivity composite oxide film on the surface of an aluminum alloy , including anodic oxidation of aluminum alloy and in-hole pulse ultrasonic electrodeposition. Background technique
[0002] With the development of space vehicle technology, temperature control has become more and more important. Spacecraft experience extreme temperature cycles in orbit due to direct sunlight on one side and extremely cold space on the other. This would make the surface temperature of the spacecraft very variable, ranging from -200°C to +200°C, and in the absence of an atmosphere, heat exchange between the spacecraft and the external environment would be limited to radiatio...