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Method for preparing low-absorptivity high-hemispherical-emissivity oxidation film on surface of aluminum through electro-deposition

A low absorption rate, electrodeposition technology, applied in the direction of anodic oxidation, electrolytic inorganic material coating, etc., can solve the problems of uneven surface, easy aging, poor bonding force, etc., and achieve the effect of high solar absorption rate and excellent aging resistance

Active Publication Date: 2017-02-22
FOSHAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, organic coatings are mostly sprayed, which leads to problems such as poor bonding with the substrate, easy aging, uneven surface, and greatly increasing the weight of the spacecraft.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] (1) First, put the 6063 aluminum alloy material into a 60g / L NaOH solution, and etched it for 3 minutes at a temperature of 50°C. Rinse the sample after alkali etching with water and put it into 45% HNO 3 The ash was removed for 5 minutes, and the ash-removed material was washed with ultrapure water and then oxidized.

[0018] (2) Then put the pretreated sample into sulfuric acid with a concentration of 16% for oxidation, the aluminum alloy material is used as the anode, the lead plate is used as the cathode, and the oxidation process is: the current density is 0.5A / dm 2 , the temperature of the oxidation bath is 26°C, and the oxidation time is 120min.

[0019] (3) Finally, rinse the sealed aluminum alloy material with ultrapure water, and then conduct electrodeposition of silicon dioxide. Agent 6g, potassium nitrate 10g, distilled water 1L, H 2 SO 4 Adjust the pH to 5. The voltage is 5V, the pulse frequency is 1000Hz, the duty cycle is 40%, and the electrodepositi...

Embodiment 2

[0022] (1) First, put the 6061 aluminum alloy material into a 60g / L NaOH solution, and etched it for 3 minutes at a temperature of 50°C. Rinse the sample after alkali etching with water and put it into 45% HNO 3 The ash was removed for 5 minutes, and the ash-removed material was washed with ultrapure water and then oxidized.

[0023] (2) Then put the pretreated sample into sulfuric acid with a concentration of 17% for oxidation, the aluminum alloy material is used as the anode, the lead plate is used as the cathode, and the oxidation process is: the current density is 2.5A / dm 2 , the temperature of the oxidation bath is 2°C, and the oxidation time is 10 minutes.

[0024] (3) Finally, rinse the sealed aluminum alloy material with ultrapure water, and conduct electrodeposition of silicon dioxide. The process of electrodeposition solution is: 0.3L tetraethyl orthosilicate, 0.4L absolute ethanol, surface active Agent 2g, potassium nitrate 5g, distilled water 0.5L, H 2 SO 4 Adj...

Embodiment 3

[0027] (1) First, put the 2024 aluminum alloy material into a 60g / L NaOH solution, and etched it for 3 minutes at a temperature of 50°C. Rinse the sample after alkali etching with water and put it into 45% HNO 3 The ash was removed for 5 minutes, and the ash-removed material was washed with ultrapure water and then oxidized.

[0028] (2) Then put the pretreated sample into sulfuric acid with a concentration of 18% for oxidation, the aluminum alloy material is used as the anode, and the lead plate is used as the cathode. The oxidation process is: the current density is 1.0A / dm 2 , the temperature of the oxidation bath is 14°C, and the oxidation time is 60 minutes.

[0029] (3) Finally, rinse the treated aluminum alloy material with ultrapure water, and conduct electrodeposition of silicon dioxide. The process of electrodeposition solution is: 0.2L tetraethyl orthosilicate, 0.5L absolute ethanol, surfactant 4g, potassium nitrate 8g, distilled water 0.7L, H 2 SO 4 Adjust the ...

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Abstract

The invention relates to a method for preparing a thermal control coating on the surface of aluminum alloy through ultrasonic pulse electro-deposition, in particular to a preparation method of preparing a composite oxidation film with the low solar absorptivity / hemispherical emissivity ratio on the surface of aluminum alloy. The preparation method comprises the following steps that 1, pretreatment is conducted on the surface of the aluminum alloy; 2, anodizing is conducted on the aluminum alloy; and 3, the oxidized aluminum alloy is subjected to ultrasonic pulse electro-deposition to prepare silicon dioxide sol, then, the surface of the aluminum alloy is cleaned with distilled water and dried, and a low-absorptivity high-emissivity thermal control coating on the surface of the aluminum alloy is obtained. The solar absorptivity of the coating is 0.10-0.20, the hemispherical emissivity of the coating is 0.80-0.95, and the thermal control coating which is low in solar absorptivity and high in hemispherical emissivity has good performance.

Description

technical field [0001] The invention relates to a method for preparing an oxide film with low absorptivity and high hemispherical emissivity by electrodeposition on the surface of aluminum, in particular to a pulse ultrasonic electrodeposition preparation method for preparing a low-ratio solar absorptivity / hemispherical emissivity composite oxide film on the surface of an aluminum alloy , including anodic oxidation of aluminum alloy and in-hole pulse ultrasonic electrodeposition. Background technique [0002] With the development of space vehicle technology, temperature control has become more and more important. Spacecraft experience extreme temperature cycles in orbit due to direct sunlight on one side and extremely cold space on the other. This would make the surface temperature of the spacecraft very variable, ranging from -200°C to +200°C, and in the absence of an atmosphere, heat exchange between the spacecraft and the external environment would be limited to radiatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D11/08C25D9/04C25D5/18
CPCC25D5/18C25D9/04C25D11/08
Inventor 陈东初倪磊常萌蕾魏红阳
Owner FOSHAN UNIVERSITY
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