Three-dimensional infrared detector pixel structure and preparation method therefor

Abstract

The invention provides a three-dimensional infrared detector pixel structure and a preparation method therefor. The three-dimensional infrared detector pixel structure comprises a conductive metal region, an infrared detection structure and a conductive beam structure, wherein the conductive metal region is located on the surface of a silicon substrate; the infrared detection structure is positioned above the silicon substrate and used for detecting infrared light and generating an electric signal; the conductive beam structure is electrically connected with the infrared detection structure and used for transmitting the electric signal generated by the infrared detection structure to the conductive metal region; the conductive beam structure comprises at least one layer of conductive beams and multiple layers of conductive trenches arranged in a vertical direction; the two ends of the conductive beams in each layer are in contact with two layers of conductive trenches, the bottoms of which are not positioned on the same plane; the infrared detection structure is in contact with one corresponding layer of the conductive trenches or the conductive beams; the conductive metal region is in contact with the bottoms of the other layer of the conductive trenches; and the electric signal generated by the infrared detection structure is transmitted in the height direction of the conductive trenches and in the horizontal direction of the conductive beams so as to be transmitted downwardly to the conductive metal region along a roundabout path in the vertical direction.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a three-dimensional infrared detector pixel structure and a preparation method thereof. Background technique [0002] The infrared detector is a device that converts the incident infrared radiation signal into an electrical signal output. It uses a thermal element to detect the existence or movement of an object. The infrared radiation outside the detector mobile phone is then gathered on the infrared sensor. The infrared sensor uses a thermal element , the thermal element will output a signal when it receives a change in the temperature of the infrared radiation, convert it into an electrical signal, and then analyze the waveform of the electrical signal. Only one type of thermistor is used in the pixel structure of traditional infrared detectors, usually amorphous silicon or vanadium oxide with negative temperature coefficient, and the changing signal is amplified and ou...

AI Technical Summary

Problems solved by technology

[0003] However, the sensitivity of the detector structure using thermal elements is usually not very high, and the structure is relatively complicated, and the detection process is complicated. If a thermal sensor with high sensitivity is used, the material cost is expensive;

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