Rework method for avoiding rear-stage intermetallic dielectric layer embedded particle defects

Abstract

The invention provides a rework method for avoiding rear-stage intermetallic dielectric layer embedded particle defects. The rework method includes: step 1, detecting embedded particle defects after a process of forming a metal titanium nitride mask on a silicon dioxide covered layer; step 2, removing the metal titanium nitride mask through etching; step 3, flattening the silicon dioxide covered layer; step 4, growing silicon dioxide on the flattened silicon dioxide covered layer to enable thickness of the flattened silicon dioxide covered layer to reach a target value.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, more specifically, the invention relates to a rework method for solving the embedded particle defect of the back-stage intermetallic dielectric layer. Background technique [0002] At present, there are generally three to five layers of intermetallic dielectric layers in the back stage of the 55nm semiconductor integrated circuit manufacturing process, and the film accumulation mode of each layer is: silicon carbide barrier layer / low dielectric constant silicon dioxide layer / silicon dioxide mask / metal Titanium nitride mask / silicon dioxide coverage, any of the five-layer film deposition stations may have particle defects. If surface defects are found at the deposition station, they can be reworked by the scrubber method, and the wafer Surface particles are washed away, but in the case of buried particle defects, part of the particle is buried deep in the middle of the film, such as figu...

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Problems solved by technology

[0002] At present, there are generally three to five layers of intermetallic dielectric layers in the back stage of the 55nm semiconductor integrated circuit manufacturing process, and the film accumulation mode of each layer is: silicon carbide barrier layer / low dielectric constant silicon dioxide layer / silicon dioxide mask / metal Titanium nitride mask / silicon dioxide coverage, any of the five-layer film deposition stations may have particle defects. If surface defects are found at the deposition station, they can be reworked by the scrubber method, and the wafer Surface particles are washed away, but in the case of buried particle defects, part of the particle is buried deep in the middle of the film, such as figure 1 As shown, in this case, the scrubber cannot function, and the lot can only be released directly or the wafer is scrapped without any other rework process

This will result in a great loss of product yield and cost increase

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