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Self-support thermosensitive thin film type infrared detector with bright compensation element

A technology for infrared detectors and compensation components, applied in electrical components, semiconductor devices, circuits, etc., can solve problems such as increasing the difficulty of process implementation, and achieve the effects of reducing process complexity, reducing thermal conductivity, and high density

Inactive Publication Date: 2017-02-22
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to cover the compensation element, people design various complex structures, which increases the difficulty of implementing the process

Method used

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  • Self-support thermosensitive thin film type infrared detector with bright compensation element

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Embodiment Construction

[0023] Three specific embodiments of the detector are provided below, and the present invention is further described. The main variable parameters in the embodiment are the thickness of the manganese-cobalt-nickel-oxygen film and the thickness of the air interlayer. The thicknesses of the manganese-cobalt-nickel-oxygen film are 2 μm, 5 μm, and 10 μm respectively, and the corresponding air interlayer thicknesses are 1 μm, 3 μm, and 5 μm.

[0024] 1. Cleaning of the substrate:

[0025] Select a 0.5mm thick transparent double-polished sapphire substrate, clean it with chloroform, ether, acetone, and alcohol in sequence to remove oil and impurities on the surface, then rinse it with deionized water, and then dry it with high-purity nitrogen.

[0026] 2. Preparation of sacrificial layer:

[0027] Spin-coat photosensitive polyimide on the cleaned sapphire substrate with a coater, the speed of the coater is about 3000 rpm, and the thickness of the polyimide can be selected according...

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PUM

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Abstract

The invention discloses a self-support thermosensitive thin film type infrared detector with a bright compensation element. The device structure comprises a sapphire substrate. A rectangular sensitive element and a compensation element are fabricated on the substrate. The compensation element is on either side of the sensitive element. The sensitive element section is inverted, and an air interlayer is arranged between the substrate and the sensitive element. The compensation element is directly fabricated on the substrate. Electrode ends are respectively fabricated on inner and outer sides of the short edges of the sensitive element and the compensation element. Electrodes adjacent to the sensitive element and the compensation element are communicated to form a common electrode as a signal lead out end. Through the structure, the response rate of the thermosensitive detector is greatly improved. Due to the design of the bright compensation element, the compensation of the ambient temperature fluctuation is realized, and the process fabrication difficulty is effectively reduced.

Description

technical field [0001] The invention relates to a wide-band thermosensitive infrared detector with a "bright" compensation element, in particular to a manganese-cobalt-nickel-oxygen film-type sensitive element with an air interlayer made of a sacrificial layer, and a new type of "bright" sensor that does not need to be shielded. compensation yuan. Background technique [0002] Thermal infrared detector is an important infrared detector. Compared with photon infrared detector, it has the advantages of room temperature operation, wide response spectrum, high reliability, low preparation cost and simple device packaging. It is widely used in military and civilian applications. Wide range of applications. Among them, manganese-cobalt-nickel-oxygen, a ternary alloy material of manganese, cobalt, and nickel transition metal oxides, has the advantages of high temperature coefficient of resistance, convenient preparation, and high reliability, and has played an important role in sp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L31/032H01L31/02
CPCH01L31/09H01L31/02H01L31/032
Inventor 刘福浩杨晓阳贾嘉蒋科罗毅刘诗嘉孙晓宇李向阳
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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