Power module base unit and power module

Abstract

In the power module substrate unit (51) of the present invention, the circuit layer (12) is composed of a plurality of small circuit layers (12S), the ceramic substrate layer (11) is composed of at least one piece, and the metal layer (13) is composed of at least one piece, The small circuit layer (12S) is a stacked structure, and the stacked structure has a first aluminum layer (15) bonded to one side of the ceramic substrate layer (11) and a first copper layer (15) bonded to the first aluminum layer (15) by solid phase diffusion layer (16), the metal layer (13) is formed by the same material as the first aluminum layer (15), the heat dissipation plate (30) is formed by copper or copper alloy, and the metal layer (13) and the heat dissipation plate (30) are diffused in solid phase For bonding, set the thickness of the first copper layer (16) as t1 (mm), and set the bonding area as A1 (mm 2 ), set the yield strength as σ1(N / mm 2 ), the thickness of the heat dissipation plate (30) on the position where the metal layer is bonded is set as t2, and the joint area is set as A2 (mm 2 ), set the yield strength as σ2(N / mm 2 ), the ratio (t1×A1×σ1) / (t2×A2×σ2) is 0.80 or more and 1.20 or less.

Description

technical field [0001] The present invention relates to a power module substrate unit and a power module used in semiconductor devices that control large current and high voltage. [0002] This application claims priority based on Japanese Patent Application No. 2014-138716 filed on July 4, 2014 and Japanese Patent Application No. 2015-130972 filed on June 30, 2015, and uses the contents thereof here. Background technique [0003] The power module uses a substrate for a power module in which a metal plate forming a circuit layer is bonded to one side of a ceramic substrate including aluminum nitride, and a heat sink is bonded to the other side. A semiconductor element such as a power element is mounted on a circuit layer of the power module substrate via a solder material. [0004] The miniaturization of semiconductor elements has been promoted with the increase in output density, and the integration of modules has been increasingly demanded. As a general integration of po...

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Problems solved by technology

[0009] However, in the method described in Patent Document 1, even if good heat dissipation can be maintained by preventing cracking of the ceramic substrate and peeling of the encapsulating resin, a wiring member (lead frame) that is not too rigid must perform the positioning function. , so it is difficult to obtain the positional accuracy of each insulating substrate, and it is difficult to achieve higher integration

[0010] Also, as described in Patent Document 2, in the method of directly supporting the insulating substrates, it is not easy to accurately position a plurality of insulating substrates due to the limitation of the mold, etc.

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