Sapphire diaphragm thinning machining method achieved through double-faced grinding pad

A processing method and double-sided grinding technology, applied in the field of sapphire, can solve the problems of many appearance scratches on the wafer, high cost, low processing efficiency, etc., and achieve the effects of improving appearance quality, convenient preparation and improving processing efficiency.

Inactive Publication Date: 2017-03-01
江苏吉星新材料有限公司
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The problem to be solved by the present invention is to provide a double-sided grinding pad sapphire window thinning processing method to solve

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Embodiment 1: a kind of double-sided grinding pad sapphire window plate thinning processing method, its processing technology is as follows:

[0016] (1) Sheet production: first cut the sapphire workpiece into sapphire flakes, and the thickness of the sapphire flakes is 400 microns;

[0017] (2) Install and place pads and punch holes: Paste polyurethane pads on the upper and lower panels respectively, and use a utility blade to drill holes on the quicksand on the panel;

[0018] (3) Preparation of diamond grinding liquid: 5% diamond grinding liquid and 95% self-made suspension were mixed for reaction, stirred at a constant speed at 20°C for 15 minutes, and diamond grinding liquid was prepared;

[0019] (4) Adding diamond grinding fluid: Adding diamond grinding fluid, the flow rate of diamond grinding fluid is kept at 10mL / min, so that the diamond grinding fluid can be effectively distributed on the surface of the disk;

[0020] (5) Grinding: Turn on the grinder for gri...

Embodiment 2

[0022] Embodiment 2: a kind of double-sided grinding pad sapphire window plate thinning processing method, its processing technology is as follows:

[0023] (1) Sheet production: first cut the sapphire workpiece into sapphire flakes, and the thickness of the sapphire flakes is 450 microns;

[0024] (2) Install and place pads and punch holes: Paste polyurethane pads on the upper and lower panels respectively, and use a utility blade to drill holes on the quicksand on the panel;

[0025] (3) Preparation of diamond grinding liquid: 5% of diamond grinding liquid and 95% of self-made suspension were mixed for reaction, stirred at a constant speed at 30°C for 30 minutes, and diamond grinding liquid was prepared;

[0026] (4) Adding diamond grinding fluid: adding diamond grinding fluid, the flow rate of diamond grinding fluid is kept at 20mL / min, so that the diamond grinding fluid can be effectively distributed on the surface of the disk;

[0027] (5) Grinding: Turn on the grinder f...

Embodiment 3

[0029] Embodiment 3: a kind of double-sided grinding pad sapphire window plate thinning processing method, its processing technology is as follows:

[0030] (1) Sheet production: first cut the sapphire workpiece into sapphire flakes, where the thickness of the sapphire flakes is 500 microns;

[0031] (2) Install and place pads and punch holes: Paste polyurethane pads on the upper and lower panels respectively, and use a utility blade to drill holes on the quicksand on the panel;

[0032] (3) Preparation of diamond grinding fluid: 5% of diamond grinding fluid and 95% of self-made suspension were mixed for reaction, stirred at a constant speed at 25°C for 45 minutes to prepare diamond grinding fluid;

[0033] (4) Adding diamond grinding fluid: Adding diamond grinding fluid, the flow rate of diamond grinding fluid is kept at 15mL / min, so that the diamond grinding fluid can be effectively distributed on the surface of the disk;

[0034] (5) Grinding: Turn on the grinder for grind...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a sapphire diaphragm thinning machining method achieved through a double-faced grinding pad. The method comprises the steps of diaphragm manufacturing, pad installing and placing and punching, diamond grinding liquid preparing, diamond grinding liquid adding, grinding, grinding liquid recycling and the like. According to the method, the steps are simple, and preparation is convenient; by adopting the machining method of cooperating the polyurethane pad with diamond grinding liquid and utilizing the characteristics that the polyurethane pad is low in hardness and has many small holes in the surface, diamond particles can be inlaid into the surface in the grinding process, abrasion of the diamond particles to the wafer surface is effectively reduced, the machining efficiency is effectively improved, the wafer appearance quality is improved, the cost is greatly reduced, and recycling is achieved.

Description

technical field [0001] The invention relates to the technical field of sapphire, in particular to a thinning processing method for a double-sided grinding pad sapphire window. Background technique [0002] Sapphire crystal has excellent optical properties, physical properties and stable chemical properties. Widely used in high-brightness LED substrate materials, various optical components, and scanner window materials. The sapphire window has the following excellent characteristics in the field of optical windows: 1. High optical transmittance, sapphire crystal has good light transmission performance, and its light transmission range is 0.15-7.5 microns, covering ultraviolet, visible and near-infrared , mid-infrared and other bands; 2. High wear resistance, the expansion coefficient is only 5X10-6 / degree, the melting point is 2050°C, the working temperature can reach 1900°C, and has excellent thermal shock resistance and high temperature resistance; 3. Good mechanical prop...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B24B37/24B24B7/22C09K3/14
CPCB24B37/24B24B7/22C09K3/14C09K3/1454
Inventor 胡孔林王晨宇
Owner 江苏吉星新材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products