Method for preparing high thermal conductivity graphite through catalytic graphitization

Abstract

The invention discloses a method for preparing high thermal conductivity graphite through catalytic graphitization. The method comprises the following steps: (1), preparing a carbon film material with an amorphous carbon structure by performing carbonization treatment on a polyimide film; (2), loading a catalyst onto the surface of the carbon film material obtained in the first step through any one method of solution impregnation, electroplating, chemical plating and liquid-phase precipitation; (3), performing graphitization treatment on the carbon film material, with the surface being loaded with the catalyst, obtained in the second step, so as to obtain the high thermal conductivity graphite. According to the method, a PI film is carbonized, so as to obtain the carbon film with the amorphous carbon structure, and then the catalyst is loaded onto the carbon film formed after carbonization, so that the catalyst is subjected to contact reaction with the film with the amorphous carbon structure from the outer part to the inner part, and damage caused by the overflow of the catalyst from the inner part is avoided. A graphite film prepared through the method can obtain high graphitization degree, excellent thermal conductivity and good bending resistance in low graphitization temperature.

Description

technical field [0001] The invention belongs to the field of high thermal conductivity materials, in particular to a method for preparing high thermal conductivity graphite by catalytic graphitization. Background technique [0002] With the rapid development of the microelectronics industry, electronic devices and equipment continue to develop in the direction of high power, high-density integration and miniaturization. The resulting heating problem poses a severe challenge to the performance, reliability and life of electronic products. . Highly oriented graphite film has excellent thermal conductivity and is an ideal and indispensable material for thermal field management in the field of microelectronic packaging and integration. In recent years, high thermal conductivity graphite films prepared by carbonization and graphitization using PI films as raw materials have been widely used in electronic products such as smartphones and notebook computers. However, at present, ...

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Problems solved by technology

[0003] At present, the technology of using catalytic graphitization to prepare high thermal conductivity graphite film is to add catalyst powder during the preparation process of PI film to prepare a PI film containing catalyst. Using this method, the gas released during carbonization will easily deactivate the catalyst. , can not play the role of catalyzing graphitization; and the melting point and boiling point of the catalyst are mostly within the graphitization temperature, such as the melting point of nickel is 1455 ° C, the boiling point is 2730 ° C, so the catalyst will melt or even gasify during the high temperature graphitization process. Spilling from the film (can be described as a "sweating" phenomenon), causing damage to the film structure, causing new interfaces and defects, and reducing thermal conductivity; Multi-layer structure, but this will increase the difficulty of preparing PI thin films, and cannot fundamentally suppress the overflow of catalysts