Quadrivalent chromium doped gallium oxide crystal and preparation method and application thereof

A technology of gallium oxide and tetravalent chromium, applied in the field of crystals and devices, can solve the problems of limited application range, low crystal thermal conductivity, inconvenient modulation, etc., and achieve the effect of stable physical and chemical properties

Active Publication Date: 2017-03-22
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thermal conductivity of the crystal is relatively low, which limits its application in high-power lasers
In addition, the crystal is a self-Q-switching cr

Method used

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  • Quadrivalent chromium doped gallium oxide crystal and preparation method and application thereof
  • Quadrivalent chromium doped gallium oxide crystal and preparation method and application thereof
  • Quadrivalent chromium doped gallium oxide crystal and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] x=0.01, y=0.02, the A position is Mg, and the crystal chemical formula of tetravalent chromium-doped gallium oxide is β-(Ga 0.97 Cr 0.01 Mg 0.02 ) 2 o 3 .

[0034] The preparation method of tetravalent chromium-doped gallium oxide crystal is as follows:

[0035] (1) Selection and processing of raw materials

[0036] Weigh Ga with a purity of 99.999% according to the stoichiometric ratio 2 o 3 、Cr 2 o 3 , MgO, put the raw materials into the mixer and mix them thoroughly for 48 hours. After the mixing is completed, the mixed raw materials are vacuum-dried at 100-200° C. for 2 hours to prevent absorbed water from entering the growth system, and the dried raw materials are pressed into a cake shape with a hydraulic press. Then put the cake into a corundum crucible and sinter at 1400°C for 48 hours to obtain a chromium-magnesium double-doped gallium oxide polycrystalline material.

[0037] (2) Crystal growth

[0038] a. Put the pressed raw materials into the irid...

Embodiment 2

[0042] Example 2: x=0.02, y=0.05, the A position is Mg, and the chemical formula of tetravalent chromium-doped gallium oxide crystal is β-(Ga 0.93 Cr 0.02 Mg 0.05 ) 2 o 3 .

[0043] The preparation method of tetravalent chromium-doped gallium oxide crystal is as follows:

[0044] (1) Selection and processing of raw materials

[0045] Weigh Ga with a purity of 99.999% according to the stoichiometric ratio 2 o 3 、Cr 2 o 3 , MgO, put the raw materials into the mixer and mix them thoroughly for 48 hours. After the mixing is completed, the mixed raw materials are vacuum-dried at 100-200° C. for 2 hours to prevent absorbed water from entering the growth system, and the dried raw materials are pressed into a cake shape with a hydraulic press. Then put the cake into a corundum crucible and sinter at 1400°C for 48 hours to obtain a chromium-magnesium double-doped gallium oxide polycrystalline material.

[0046] (2) Crystal growth

[0047] The difference from the step (2) in...

Embodiment 3

[0048] Example 3: x=0.02, y=0.02, the A position is Ca, and the crystal chemical formula of tetravalent chromium-doped gallium oxide is β-(Ga 0.96 Cr 0.02 Ca 0.02 ) 2 o 3 .

[0049] The preparation method of tetravalent chromium-doped gallium oxide crystal is as follows:

[0050] (1) Selection and processing of raw materials

[0051] Weigh Ga with a purity of 99.999% according to the stoichiometric ratio 2 o 3 、Cr 2 o 3 , CaO, put the raw materials into the mixer and mix them thoroughly for 48 hours. After the mixing is completed, the mixed raw materials are vacuum-dried at 100-200° C. for 2 hours to prevent absorbed water from entering the growth system, and the dried raw materials are pressed into a cake shape with a hydraulic press. Then put the cake into a corundum crucible and sinter at 1400° C. for 48 hours to obtain a chromium-calcium double-doped gallium oxide polycrystalline material.

[0052] (2) Crystal growth

[0053] a. Put the pressed raw materials in...

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Abstract

The present invention relates to a quadrivalent chromium doped gallium oxide crystal and a preparation method and application thereof, the molecular formula of the crystal is beta-(Ga1-x-yCrxAy) 2O3, 0.001<X<0.3, 0<Y<0.3, and A is a positive bivalent metal element. By doping of Cr in a beta-Ga2O3 crystal or double doping of the Cr and a bivalent metal cation in the beta-Ga2O3 crystal, the quadrivalent chromium doped beta-Ga2O3 crystal can be obtained, and the quadrivalent chromium doped gallium oxide crystal is a saturable absorption material with excellent properties. The crystal has stable physical and chemical properties and high thermal conductivity, and can also be used as a laser crystal.

Description

technical field [0001] The invention relates to a novel optical crystal and its preparation method and application, in particular to a tetravalent chromium-doped gallium oxide crystal and its preparation method and application, belonging to the technical field of crystals and devices. Background technique [0002] Tetravalent chromium-doped optical crystal materials have important application value in the field of optics, and can be used as components such as laser crystals and saturable absorbers. Such materials currently widely used mainly include tetravalent chromium-doped YAG crystals, tetravalent chromium-doped GGG crystals, etc. It is important to explore optical crystals with better performance, especially tetravalent chromium-doped optical crystals with higher thermal conductivity. practical application value. [0003] Because of the advantages of high energy and short pulses, pulsed lasers have attracted widespread attention from various industries. Pulsed lasers ...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B15/34C30B28/02
CPCC30B15/34C30B28/02C30B29/16
Inventor 贾志泰穆文祥陶绪堂尹延如胡强强
Owner SHANDONG UNIV
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