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An alloy quantum dot core with uniform internal and external components and its preparation method

A quantum dot, uniform technology, applied in the field of quantum dots, can solve the problems of low luminous efficiency, unstable wavelength and fluorescence intensity, poor repeatability, etc., and achieve the effect of high repeatability

Active Publication Date: 2021-04-13
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide an alloy quantum dot core with uniform internal and external components and a preparation method thereof, aiming to solve the problem of the poor repeatability of the existing alloy quantum dot core preparation method and the resulting alloy quantum dot core Inhomogeneous components inside and outside the point core lead to low luminous efficiency, unstable wavelength and fluorescence intensity

Method used

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  • An alloy quantum dot core with uniform internal and external components and its preparation method
  • An alloy quantum dot core with uniform internal and external components and its preparation method
  • An alloy quantum dot core with uniform internal and external components and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] To obtain Cd with uniform internal and external components x Zn 1-x S alloy quantum dot core as an example

[0052] 1. Cadmium Oleate Cd(OA) 2 Preparation of precursors:

[0053] Add 0.2mmol of cadmium oxide (CdO), 0.5ml of oleic acid (OA) and 5ml of octadecene (ODE) into the three-necked flask. First vacuumize at room temperature for 30mins, then heat to 180°C and exhaust argon for 60mins, then maintain 180°C for pumping Vacuum 30mins, cool to room temperature for later use.

[0054] 2. Preparation of zinc oleate Zn(OA)2 precursor:

[0055] Add zinc acetate Zn(Ac) into the three-necked flask 2 1.8mmol, oleic acid (OA) 1ml, octadecene (ODE) 5ml, vacuumize at room temperature for 30mins, then heat to 180°C and exhaust argon for 60mins, then vacuumize at 180°C for 30mins, cool to room temperature for later use.

[0056] 3. Preparation of sulfur (S) precursor:

[0057] Add 13mg of S to 1ml of octadecene (ODE) and heat at 230°C for 20mins, which is maintained at 140...

Embodiment 2

[0061] To obtain Cd with uniform internal and external components x Zn 1-x Se alloy quantum dot core as an example

[0062] 1. Cadmium Oleate Cd(OA) 2 Preparation of precursors:

[0063] Add 0.2mmol of cadmium oxide (CdO), 0.5ml of oleic acid (OA) and 5ml of octadecene (ODE) into the three-necked flask. First vacuumize at room temperature for 30mins, then heat to 180°C and exhaust argon for 60mins, then maintain 180°C for pumping Vacuum 30mins, cool to room temperature for later use.

[0064] 2. Preparation of zinc oleate Zn(OA)2 precursor:

[0065] Add zinc acetate Zn(Ac) into the three-necked flask 2 1.8mmol, oleic acid (OA) 1ml, octadecene (ODE) 5ml, vacuumize at room temperature for 30mins, then heat to 180°C and exhaust argon for 60mins, then vacuumize at 180°C for 30mins, cool to room temperature for later use.

[0066] 3. Preparation of Selenium (Se) Precursor:

[0067] Add 25mg of Se to 1ml of octadecene (ODE) and heat at 230°C for 30mins, which is maintained a...

Embodiment 3

[0071] To obtain Cd with uniform internal and external components x Zn 1-x S y Se 1-y Alloy quantum dot core as an example

[0072] 1. Cadmium Oleate Cd(OA) 2 Preparation of precursors:

[0073] Add 0.2mmol of cadmium oxide (CdO), 0.5ml of oleic acid (OA) and 5ml of octadecene (ODE) into the three-necked flask. First vacuumize at room temperature for 30mins, then heat to 180°C and exhaust argon for 60mins, then maintain 180°C for pumping Vacuum 30mins, cool to room temperature for later use.

[0074] 2. Preparation of zinc oleate Zn(OA)2 precursor:

[0075] Add zinc acetate Zn(Ac) into the three-necked flask 2 3.6mmol, 1ml of oleic acid (OA), 5ml of octadecene (ODE) was first vacuumed at room temperature for 30mins, then heated to 180°C to exhaust argon for 60mins, then vacuumed at 180°C for 30mins, cooled to room temperature for later use.

[0076] 3. Preparation of sulfur (S) precursor 1:

[0077] Add 20mg of S to 1ml of octadecene (ODE) and heat at 230°C for 20min...

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Abstract

The invention discloses an alloy quantum dot core with uniform internal and external components and a preparation method thereof, wherein the method comprises: stirring and mixing the pre-prepared at least two cation precursor solutions and heating them to a predetermined temperature, injecting the prepared At least one anion precursor solution of the nucleation reaction is carried out by continuing to inject the cation precursor solution or the anion precursor solution or simultaneously injecting the cation precursor solution and the anion precursor solution at a gradually changing speed during the nucleation reaction, so that the nucleation reaction During the process, the reaction rate of each component remains relatively stable and the stoichiometric ratio of nucleation is relatively consistent, thereby preparing an alloy quantum dot nucleus with uniform internal and external components. The method of the invention effectively solves the problems of inhomogeneity of the inner and outer components of the alloy quantum dot core, low luminous efficiency, unstable wavelength and fluorescence intensity, and the method provided by the invention has the advantages of simple operation, easy regulation, and high repeatability.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to an alloy quantum dot core with uniform internal and external components and a preparation method thereof. Background technique [0002] In quantum dot light-emitting diodes, obtaining high device efficiency and long life has always been the two goals pursued by researchers. However, in terms of improving device efficiency, the fluorescence intensity of quantum dots is an important factor restricting device efficiency. For quantum dots with higher quantum yield, there are corresponding requirements for the structure of electroluminescent quantum dots in order to obtain better device efficiency and longer lifetime. [0003] Alloy quantum dots have attracted much attention due to their advantages such as adjustable band gap, high fluorescence intensity, and good stability. When preparing alloy quantum dots with corresponding light-emitting bands, the preparation of high-quality...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/56C09K11/88C01G11/02B82Y20/00B82Y40/00H01L33/50
CPCB82Y20/00B82Y40/00C01G11/02C01P2004/64C09K11/565C09K11/883H01L33/502H01L2933/0041
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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