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Method for preparing high-quality copper indium sulfide by employing single-source molecular precursor

An indium copper sulfide and precursor technology, applied in chemical instruments and methods, inorganic chemistry, gallium/indium/thallium compounds, etc., can solve the problems of uneven composition inside and outside, difficult to meet the requirements of high-purity raw materials for photovoltaic devices, etc. The production equipment and process are simple, the raw materials are cheap, and the reaction temperature and energy consumption are low.

Inactive Publication Date: 2010-06-16
YANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the large difference in the solubility of cuprous sulfide and indium sulfide in water and some other solvents, cuprous sulfide and indium sulfide are often deposited first, and the other is deposited later, resulting in uneven composition of the product, and even the formation of a core-shell Structure, etc., it is difficult to meet the requirements of high-purity raw materials for manufacturing high-efficiency photovoltaic devices

Method used

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  • Method for preparing high-quality copper indium sulfide by employing single-source molecular precursor
  • Method for preparing high-quality copper indium sulfide by employing single-source molecular precursor
  • Method for preparing high-quality copper indium sulfide by employing single-source molecular precursor

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Effect test

Embodiment 1

[0025] 1. Weigh 4mmol of copper chloride and indium chloride powder respectively, mix the two solid powders, add water to dissolve, and make a 200mL solution; 2. Weigh 20mmol of sodium diethyldithiocarbamate (abbreviation: Na-DDTC ) powder, dissolved in water, and made into 200mL solution; 3. Slowly add the mixed solution of copper chloride and indium chloride prepared in step (1) to the Na-DDTC solution prepared in step (2) under stirring, and keep at room temperature Stir for 5 hours, then filter the resulting precipitate, and dry it in an oven at 60°C for 12 hours to obtain the precursor CuIn-(DDTC) 5 ; 4. Take 0.5g precursor CuIn-(DDTC) 5 Put it into a polytetrafluoroethylene-lined autoclave with a capacity of 40mL, add 32mL of ethanol as a solvent, seal the autoclave and place it in an electric oven, heat it at 180°C for 12 hours, then stop heating and let it cool naturally After reaching room temperature, the resulting precipitate was suction-filtered, washed several ti...

Embodiment 2

[0032] 1. Weigh 4mmol of copper chloride and indium chloride powder respectively, mix the two solid powders, add water to dissolve, and make a 200mL solution; 2. Weigh 20mmol of sodium diethyldithiocarbamate (abbreviation: Na-DDTC ) powder, dissolved in water, and made into 200mL solution; 3. Slowly add the mixed solution of copper chloride and indium chloride prepared in step (1) to the Na-DDTC solution prepared in step (2) under stirring, and keep at room temperature Stir for 5 hours, then filter the resulting precipitate, and dry it in an oven at 60°C for 12 hours to obtain the precursor CuIn-(DDTC) 5 ; 4. Take 0.5g precursor CuIn-(DDTC) 5Put it into a polytetrafluoroethylene-lined autoclave with a capacity of 40mL, add 32mL of ethanol as a solvent, seal the autoclave and place it in an electric oven, heat at 180°C for 36 hours, then stop heating and let it cool naturally After reaching room temperature, the resulting precipitate was suction-filtered, washed several times ...

Embodiment 3

[0039] 1. Weigh 4mmol of copper chloride and indium chloride powder respectively, mix the two solid powders, add water to dissolve, and make a 200mL solution; 2. Weigh 20mmol of sodium diethyldithiocarbamate (abbreviation: Na-DDTC ) powder, dissolved in water, and made into 200mL solution; 3. Slowly add the mixed solution of copper chloride and indium chloride prepared in step (1) to the Na-DDTC solution prepared in step (2) under stirring, and keep at room temperature Stir for 5 hours, then filter the resulting precipitate, and dry it in an oven at 60°C for 12 hours to obtain the precursor CuIn-(DDTC) 5 ; 4. Take 0.5g precursor CuIn-(DDTC) 5 Put it into a polytetrafluoroethylene-lined autoclave with a capacity of 40mL, add 32mL of ethanol as a solvent, seal the autoclave and place it in an electric oven, heat at 190°C for 36 hours, then stop heating and let it cool naturally After reaching room temperature, the resulting precipitate was suction-filtered, washed several times...

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Abstract

The invention relates to a method for preparing high-quality copper indium sulfide by employing a single-source molecular precursor. The method comprises the following steps: mixing copper chloride and indium chloride powder to prepare a solution, and preparing sodium diethyl dithiocarbamate powder into a solution; adding the former solution to the latter solution slowly in the way of stirring, filtering and drying precipitate, putting the obtained product into an autoclave and adding ethanol used as a solvent; sealing the autoclave and then placing the autoclave in an electric dry oven, heating and cooling naturally, washing with deionized water and absolute ethyl alcohol, and finally drying to obtain black copper indium sulfide powder. The invention solves the defaults of a gas phase method and a liquid phase method of expensive equipment, complex process operation, low yield, and the uniformity of the inner and outer composition of the product and the generation of a core-shell structure which are caused by the relatively larger solubility difference of the multi-source precursor in solvent. The invention has the advantages of cheap and easily obtained raw materials, no toxic H2S gas or vacuum environment, and simple process, and can obtain pure tetragonal phase copper indium sulfide with sea urchin-like morphology and high degree of crystallinity.

Description

technical field [0001] The invention relates to a method for preparing high-quality indium copper sulfide as a solar cell material, belonging to the field of new functional materials, and in particular to a method for preparing high-quality indium copper sulfide by using a single-source molecular precursor. Background technique [0002] copper indium sulfide (CuInS 2 ) is a direct band gap semiconductor material with a band gap of 1.50eV, which is close to the optimal band gap (1.45eV) of solar cell materials; its light absorption coefficient (6×10 5 cm -1 ) is the highest among the existing solar cell materials, which is very beneficial to the absorption of photons in the solar cell base area and the collection of minority carriers, and can make the film very thin, thereby reducing the cost. In addition, CuInS 2 High-quality p-type and n-type films can be produced, and it is easy to make a homojunction. The theoretical conversion efficiency of its homojunction solar cell...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00
Inventor 张永才张留星张明
Owner YANGZHOU UNIV
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