Unlock instant, AI-driven research and patent intelligence for your innovation.

High-energy high-speed plasma jet deposition SIC coating under ultra-low pressure atmosphere and its preparation method and application

A jet deposition, ultra-low pressure technology, applied in coating, metal material coating process, fusion spraying, etc., can solve the problems of slow deposition speed, pollution, and inapplicability of SiC coating, etc., and achieve the effect of enhancing compactness

Active Publication Date: 2019-07-23
XI AN JIAOTONG UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since SiC decomposes directly when heated to a high temperature, the method of preparing a coating after heating and melting the material by common thermal spraying, laser cladding, etc. cannot be applied to the preparation of SiC coatings.
Usually, gaseous precursors are used as raw materials to deposit and prepare SiC coatings by chemical vapor deposition. This method has the characteristics of traditional chemical vapor deposition methods, that is, the deposition rate is slow and there are environmental pollution problems.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-energy high-speed plasma jet deposition SIC coating under ultra-low pressure atmosphere and its preparation method and application
  • High-energy high-speed plasma jet deposition SIC coating under ultra-low pressure atmosphere and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] TGV plasma spraying system is adopted, with 45L / min Ar as the main plasma generating gas, and 6.3% hydrogen is added, in a low-pressure chamber filled with Ar at a pressure of 150Pa, a plasma jet is generated at an arc power of 40kW, and the powder is sprayed Silicon carbide (SiC) with a particle size of 5-30 μm is fed into the plasma jet to be heated, decomposed and gasified, and the Al 2 o 3 The surface of the substrate is preheated to about 650-1200°C to prepare the SiC coating. Such as figure 1 It can be seen from the cross-sectional structure of the coating that the thickness of the prepared coating is uniform and dense. The SiC coating evenly covers the surface of the substrate. Analysis indicated that the coating contained some Si. When the H in the plasma gas flow 2 The flow rate is reduced, the Si content is reduced, and a pure Si coating is obtained.

Embodiment 2

[0024] Using a high-energy plasma spraying system, with 45L / min Ar and 50L / min He as the plasma generating gas, in a low-pressure chamber filled with Ar at a pressure of 250Pa, a plasma jet is generated at an arc power of 150kW, and the powder particle size is 2 -15μm silicon carbide (SiC) is fed into the plasma jet as the raw material to be heated, decomposed and gasified, and the SiC coating is prepared on the Zr substrate whose surface is preheated to about 800-1000°C.

Embodiment 3

[0026] Using a high-energy plasma spraying system, with 60L / min Ar and 40L / min He as the plasma generating gas, in a low-pressure chamber filled with Ar at a pressure of 300Pa, a plasma jet is generated at 120kW arc power, and the powder particle size is 0.2 -1μm silicon carbide (SiC) is fed into the plasma jet for heating, decomposition and gasification, and a carbon fiber reinforced silicon carbide (C / SiC) composite material substrate with a uniform thickness is prepared on the surface preheated to about 800-1000°C. dense SiC coating.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a high-energy and high-speed plasma jet deposition SiC coating under an ultralow atmosphere as well as a preparation method and application thereof, and belongs to the fields of material processing and mechanical manufacturing. The preparation method is characterized in that SiC ceramic powder is used as a raw material and is quickly heated to decomposition temperature or above by using high-energy plasma; after the SiC ceramic powder is decomposed, the decomposed powder is deposited on the substrate surface by gaseous phase in the ultralow-pressure atmosphere to form the SiC coating. According to the method, the dense SiC coating can be quickly deposited by the gaseous phase; the SiC powder with low price is used as a deposition source substance; and the deposition source substance is convenient in source and is low in cost. The invention provides a preparation method of a high-energy and high-speed plasma jet deposition SiC-SiC based coating under the ultralow atmosphere, which is used for preparing a coating with the advantages of excellent wear resistance, corrosion resistance and nuclear radiation resistance or a conductive coating.

Description

technical field [0001] The invention belongs to the field of material processing and mechanical manufacturing, and in particular relates to a high-energy high-speed plasma jet deposition SiC coating in an ultra-low pressure atmosphere, a preparation method and application thereof. Background technique [0002] Silicon carbide (SiC) has the characteristics of high hardness, high temperature strength, high temperature oxidation resistance and thermal stability, high thermal conductivity, high band gap, and excellent resistance to neutron radiation damage. It has been used as a wear-resistant material at room temperature, High-temperature structural materials, heating device materials, and high-power semiconductor device materials are widely used, and they are also used in the form of single-component wear-resistant and functional coatings, and composite coatings composed of other materials. In recent years, with the development of nuclear energy technology and the further impr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C4/134C23C4/10
CPCC23C4/10
Inventor 李长久李成新杨冠军
Owner XI AN JIAOTONG UNIV